CSD25303W1015

Mfr. #:: CSD25303W1015
विवरण:: MOSFET PCh NexFET Pwr MOSFET
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: CSD25303W1015 डाटा पाना
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थप जानकारी:: CSD25303W1015 थप जानकारी CSD25303W1015 Product Details

उत्पादन विशेषता
विशेषता मान

निर्माता:: टेक्सास उपकरण

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: DSBGA-6

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: P- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 20 V

आईडी - निरन्तर ड्रेन वर्तमान:: 3 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 56 mOhms

Vgs - गेट-स्रोत भोल्टेज:: 8 V

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 150 C

Pd - शक्ति अपव्यय:: 1.5 W

कन्फिगरेसन:: एकल

व्यापार नाम:: NexFET

प्याकेजिङ:: रील

उचाइ:: 0.625 mm

लम्बाइ:: 1.5 mm

शृङ्खला:: CSD25303W1015

ट्रान्जिस्टर प्रकार:: 1 P-Channel

चौडाइ:: 1 mm

ब्रान्ड:: टेक्सास उपकरण

उत्पादन प्रकार:: MOSFET

कारखाना प्याक मात्रा:: 3000

उपश्रेणी:: MOSFETs

एकाइ वजन:: 0.000060 oz

Tags: CSD2530, CSD253, CSD25, CSD2, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
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CSD25303W1015 विवरण

***as Instruments: P-Channel NexFET Power MOSFET 6-DSBGA -55 to 150

***ical: Trans MOSFET P-CH 20V 3A 6-Pin DSBGA T/R

***et: Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: Obsolete, LTB expires Nov-01-2014

***ure Electronics: Single N-Channel 20 V 1.5 W 8.8 nC Silicon Surface Mount Mosfet - SOT-23-6

***ical: Trans MOSFET N-CH 20V 4A Automotive 6-Pin SOT-26 T/R

***ark: Mosfet, N-Ch, 20V, 4A, Sot-26 Rohs Compliant: Yes

***des Inc SCT: N-Channel Mosfet, 20V VDS, 8±V VGS

***emi: PowerTrench® MOSFET, Dual P-Channel, -20V , -3.7A, 72mΩ

***et Europe: Transistor MOSFET Array Dual P-CH 20V 3.7A 6-Pin MicroFET T/R

***ure Electronics: FDMA1023PZ Series -20 V -3.7 A 72 mOhm Dual P-Ch. PowerTrench® MOSFET-MicroFET-6

***r Electronics: Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229VCCC

***nell: MOSFET, DUAL P CH, -20V, -3.7A, MICROFET; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-3.7A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:1.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:µFET; No. of Pins:6; MSL:-; SVHC:No SVHC (20-Jun-2013)

***rchild Semiconductor: This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

***emi: Power MOSFET 20V 3.2A 100 mOhm Dual Complementary WDFN6 with ESD

***r Electronics: Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Package/Case:6-WDFN; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; Power Dissipation, Pd:1.5W ;RoHS Compliant: Yes

***emi: Power MOSFET 20V 3.2A 100 mOhm Dual Complementary WDFN6 with ESD

***r Electronics: Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Package/Case:6-WDFN; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; Power Dissipation, Pd:1.5W ;RoHS Compliant: Yes

*** Source Electronics: Trans MOSFET P-CH 20V 3.1A 3-Pin SOT-23 T/R / MOSFET P-CH 20V 3.1A SOT23-3

***enic: 20V 3.1A 1.6W 112m´Î@4.5V2.8A 1V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS

***roFlash: Small Signal Field-Effect Transistor, 3.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***nell: MOSFET, P CH, -20V, -3.1A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.1A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:-2.5V; Power Dissipation Pd:1.6W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:-

***peria: PMDPB65UP - 20 V, 3.5 A dual P-channel Trench MOSFET

***et: Trans MOSFET Array Dual P-CH 20V 3.5A 6-Pin HUSON EP T/R

*** Americas: =""=""=""SOT1118/ STANDARD MARKING * REEL PACK, SMD, 7""""""""

***S: French Electronic Distributor since 1988

***ark: DUAL P CH MOSFET, TRENCH, 320V, -3.5A, SOT-1118; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.5A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.058ohm; Rds(on) Test Voltage Vgs:-4.5V ;RoHS Compliant: Yes

Market price

भाग #	विवरण	स्टक	मूल्य
CSD25303W1015 DISTI # 296-28317-2-ND	MOSFET P-CH 20V 3A 6DSBGA RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
CSD25303W1015 DISTI # 296-28317-1-ND	MOSFET P-CH 20V 3A 6DSBGA RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
CSD25303W1015 DISTI # 296-28317-6-ND	MOSFET P-CH 20V 3A 6DSBGA RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
CSD25303W1015 DISTI # CSD25303W1015	Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET (Alt: CSD25303W1015) RoHS: Not Compliant Min Qty: 1000	Americas - 0	1000:$0.3619 1002:$0.3449 2002:$0.3329 5000:$0.3219 10000:$0.3129
CSD25303W1015	Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	4390	1000:$0.3300 500:$0.3500 100:$0.3600 25:$0.3800 1:$0.4100
CSD25303W1015 DISTI # 595-CSD25303W1015	MOSFET PCh NexFET Pwr MOSFET RoHS: Compliant	0

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: CSD25310Q2T OMO.#: OMO-CSD25310Q2T	MOSFET -20V, P ch NexFET MOSFETG , single SON 2x2, 23.9mOhm 6-WSON -55 to 150
	Mfr.#: CSD25310Q2 OMO.#: OMO-CSD25310Q2	MOSFET 20-V P-CH NexFET Pwr MOSFET
	Mfr.#: CSD25304W1015T OMO.#: OMO-CSD25304W1015T	MOSFET 20V P-Ch NexFET
	Mfr.#: CSD25301W1015 OMO.#: OMO-CSD25301W1015	MOSFET P-Ch NexFET Power MOSFETs
	Mfr.#: CSD25302Q2 OMO.#: OMO-CSD25302Q2	MOSFET PCh NexFET Pwr MOSFET
	Mfr.#: CSD25303W1015 OMO.#: OMO-CSD25303W1015	MOSFET PCh NexFET Pwr MOSFET
	Mfr.#: CSD25302Q2 OMO.#: OMO-CSD25302Q2-TEXAS-INSTRUMENTS	MOSFET P-CH 20V 5A 6SON
	Mfr.#: CSD25304W1015T OMO.#: OMO-CSD25304W1015T-TEXAS-INSTRUMENTS	MOSFET P-CH 20V 3A 6DSBGA
	Mfr.#: CSD25310Q2T OMO.#: OMO-CSD25310Q2T-TEXAS-INSTRUMENTS	20-V P-CHANNEL NEXFET POWER MOSF
	Mfr.#: CSD25310Q2 OMO.#: OMO-CSD25310Q2-TEXAS-INSTRUMENTS	Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R

उपलब्धता

स्टक:: Available
अर्डर मा:: 4500
मात्रा प्रविष्ट गर्नुहोस्:

CSD25303W1015 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

बाट सुरु गर्नुहोस्

CSD2530 5
CSD253 7
CSD25 33
CSD2 105
CSD 800

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CSD25303W1015

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes