SQJ200EP-T1_GE3

SQJ200EP-T1_GE3
Mfr. #:
SQJ200EP-T1_GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET Dual N Ch 20V Vds AEC-Q101 Qualified
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SQJ200EP-T1_GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SQJ200EP-T1_GE3 DatasheetSQJ200EP-T1_GE3 Datasheet (P4-P6)SQJ200EP-T1_GE3 Datasheet (P7-P9)SQJ200EP-T1_GE3 Datasheet (P10-P12)SQJ200EP-T1_GE3 Datasheet (P13-P14)
ECAD Model:
थप जानकारी:
SQJ200EP-T1_GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK-SO-8L-4
च्यानलहरूको संख्या:
2 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
20 V
आईडी - निरन्तर ड्रेन वर्तमान:
20 A, 60 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
7.4 mOhms, 3.1 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
18 nC, 43 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
27 W, 48 W
कन्फिगरेसन:
दोहोरो
च्यानल मोड:
वृद्धि
योग्यता:
AEC-Q101
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
उचाइ:
1.04 mm
लम्बाइ:
6.15 mm
शृङ्खला:
SQ
ट्रान्जिस्टर प्रकार:
2 N-Channel
चौडाइ:
5.13 mm
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
55 S, 60 S
पतन समय:
13 ns, 14 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
18 ns, 17 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
13 ns, 19 ns
सामान्य टर्न-अन ढिलाइ समय:
4 ns, 7 ns
एकाइ वजन:
0.017870 oz
Tags
SQJ200, SQJ20, SQJ2, SQJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 20V/20V 20A/60A 8-Pin PowerPAK SO T/R
***nell
MOSFET, AEC-Q101, DUAL N-CH, POWERPAK SO
***ark
Mosfet, Aec-Q101, Dual N-Ch, Powerpak So; Transistor Polarity:dual N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:20V; On Resistance Rds(On):0.0031Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Rohs Compliant: Yes
SQJ200 & SQJ202 Dual N Channel Auto MOSFETs
Vishay SQJ200 & SQJ202 Dual N Channel Auto MOSFETs are AEC-Q101 qualified automotive MOSFETs geared toward automotive applications. These Dual N Channel MOSFETs are part of the TrenchFET power MOSFET series. The MOSFETs are housed in SO-8L package types. The SQJ200 and SQJ202 have an operating junction and storage temperature range of -55 to +175.Learn More
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
भाग # Mfg। विवरण स्टक मूल्य
SQJ200EP-T1_GE3
DISTI # SQJ200EP-T1_GE3CT-ND
Vishay SiliconixMOSFET 2N-CH 20V 20A/60A PPAK SO
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2528In Stock
  • 1000:$0.4672
  • 500:$0.5918
  • 100:$0.7164
  • 10:$0.9190
  • 1:$1.0300
SQJ200EP-T1_GE3
DISTI # SQJ200EP-T1_GE3DKR-ND
Vishay SiliconixMOSFET 2N-CH 20V 20A/60A PPAK SO
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2528In Stock
  • 1000:$0.4672
  • 500:$0.5918
  • 100:$0.7164
  • 10:$0.9190
  • 1:$1.0300
SQJ200EP-T1_GE3
DISTI # SQJ200EP-T1_GE3TR-ND
Vishay SiliconixMOSFET 2N-CH 20V 20A/60A PPAK SO
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 15000:$0.3871
  • 6000:$0.4022
  • 3000:$0.4234
SQJ200EP-T1_GE3
DISTI # SQJ200EP-T1_GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V/20V 20A/60A 8-Pin PowerPAK SO T/R (Alt: SQJ200EP-T1_GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€0.3949
  • 18000:€0.4129
  • 12000:€0.4669
  • 6000:€0.5759
  • 3000:€0.8029
SQJ200EP-T1_GE3
DISTI # SQJ200EP-T1_GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V/20V 20A/60A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ200EP-T1_GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.3689
  • 18000:$0.3789
  • 12000:$0.3899
  • 6000:$0.4059
  • 3000:$0.4189
SQJ200EP-T1_GE3
DISTI # 20AC4016
Vishay IntertechnologiesDUAL N-CHANNEL 20-V (D-S) 175C MOSFE0
  • 10000:$0.3660
  • 6000:$0.3750
  • 4000:$0.3890
  • 2000:$0.4320
  • 1000:$0.4760
  • 1:$0.4960
SQJ200EP-T1_GE3
DISTI # 78-SQJ200EP-T1_GE3
Vishay IntertechnologiesMOSFET Dual N Ch 20V Vds AEC-Q101 Qualified
RoHS: Compliant
3024
  • 1:$1.1300
  • 10:$1.0000
  • 100:$0.7980
  • 500:$0.6180
  • 1000:$0.4880
  • 3000:$0.4420
  • 6000:$0.4200
  • 9000:$0.4060
SQJ200EP-T1_GE3
DISTI # TMOS1258
Vishay Intertechnologies2N-CH 20V 20/60A PPSO-8L
RoHS: Compliant
Stock DE - 0Stock HK - 0Stock US - 0
  • 3000:$0.4340
SQJ200EP-T1_GE3
DISTI # 2778694
Vishay IntertechnologiesMOSFET, AEC-Q101, DUAL N-CH, POWERPAK SO2956
  • 500:£0.4420
  • 250:£0.4780
  • 100:£0.5130
  • 10:£0.6680
  • 1:£0.8110
SQJ200EP-T1-GE3Vishay IntertechnologiesMOSFET UAL N-CHANNEL 20-V (D-S) 175C
RoHS: Compliant
Americas -
    SQJ200EP-T1_GE3
    DISTI # 2778694
    Vishay IntertechnologiesMOSFET, AEC-Q101, DUAL N-CH, POWERPAK SO
    RoHS: Compliant
    2956
    • 5000:$0.7420
    • 1000:$0.7680
    • 500:$0.8120
    • 250:$0.9560
    • 100:$1.1700
    • 25:$1.4900
    • 5:$1.8000
    छवि भाग # विवरण
    INA210AIDCKR

    Mfr.#: INA210AIDCKR

    OMO.#: OMO-INA210AIDCKR

    Current Sense Amplifiers Vltg Out Hi/Lo-Side Msmt Bi-Dir 0-Drift
    LTC7004IMSE#PBF

    Mfr.#: LTC7004IMSE#PBF

    OMO.#: OMO-LTC7004IMSE-PBF

    Gate Drivers Fast 65V Protected High-Side NMOS Static Switch Driver
    BSS138

    Mfr.#: BSS138

    OMO.#: OMO-BSS138

    MOSFET SOT-23 N-CH LOGIC
    TLV70018DDCR

    Mfr.#: TLV70018DDCR

    OMO.#: OMO-TLV70018DDCR

    LDO Voltage Regulators 200mA Low IQ LDO Reg for Portables
    G6QN2G017M2RF-J

    Mfr.#: G6QN2G017M2RF-J

    OMO.#: OMO-G6QN2G017M2RF-J

    Signal Conditioning SAW Dual Band 39&34 TD-SCDMA
    QTE-020-01-L-D-A

    Mfr.#: QTE-020-01-L-D-A

    OMO.#: OMO-QTE-020-01-L-D-A-SAMTEC

    Conn High Speed Micro Plane HDR 40 POS 0.8mm Solder ST SMD Tray
    TLV70018DDCR

    Mfr.#: TLV70018DDCR

    OMO.#: OMO-TLV70018DDCR-TEXAS-INSTRUMENTS

    LDO Voltage Regulators 200mA Low IQ LDO Reg for Portables
    BSS138

    Mfr.#: BSS138

    OMO.#: OMO-BSS138-ON-SEMICONDUCTOR

    MOSFET N-CH 50V 220MA SOT-23
    DTF13-4P

    Mfr.#: DTF13-4P

    OMO.#: OMO-DTF13-4P-TE-CONNECTIVITY

    Automotive Connectors
    G6QN2G017M2RF-J

    Mfr.#: G6QN2G017M2RF-J

    OMO.#: OMO-G6QN2G017M2RF-J-TAIYO-YUDEN

    SAW, DUAL TYPE, BAND39 / BAND34,
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1986
    मात्रा प्रविष्ट गर्नुहोस्:
    SQJ200EP-T1_GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ १.१३
    US$ १.१३
    10
    US$ १.००
    US$ १०.००
    100
    US$ ०.८०
    US$ ७९.८०
    500
    US$ ०.६२
    US$ ३०९.००
    1000
    US$ ०.४९
    US$ ४८८.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
    बाट सुरु गर्नुहोस्
    नवीनतम उत्पादनहरू
    • SUM70101EL 100 V P-Channel MOSFET
      Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
    • SIRA20DP TrenchFET® Gen IV MOSFET
      Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
    • P-Channel MOSFETs
      Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
    • SiP32452, SiP32453 Load Switch
      Vishay's load switches have a low input logic control threshold and a fast turn on time.
    • Compare SQJ200EP-T1_GE3
      SQJ200EP vs SQJ200EPT1GE3 vs SQJ200ZPGZ3
    • PowerPAIR®
      Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.
    Top