SCT3160KLHRC11

SCT3160KLHRC11
Mfr. #:
SCT3160KLHRC11
निर्माता:
Rohm Semiconductor
विवरण:
MOSFET 1200V 17A 103W SIC 160mOhm TO-247N
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SCT3160KLHRC11 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SCT3160KLHRC11 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
ROHM अर्धचालक
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
SiC
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-247N-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
1200 V
आईडी - निरन्तर ड्रेन वर्तमान:
17 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
160 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2.7 V
Vgs - गेट-स्रोत भोल्टेज:
- 4 V, 22 V
Qg - गेट चार्ज:
42 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
103 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
ट्यूब
शृङ्खला:
SCT3x
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
ROHM अर्धचालक
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
2.5 S
पतन समय:
25 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
18 ns
कारखाना प्याक मात्रा:
30
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
24 ns
सामान्य टर्न-अन ढिलाइ समय:
14 ns
Tags
SCT316, SCT31, SCT3, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SCT3x 3rd Generation SiC Trench MOSFETs
ROHM Semiconductor® SCT3x Series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This results in significantly lower switching loss and faster switching speeds, improving efficiency operation while reducing power loss in a variety of equipment. The lineup includes 650V and 1200V variants for broad applicability.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
AEC-Q101 SiC Power MOSFETs
ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch mode power supplies. The SiC Power MOSFETs can be used to boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles.
भाग # Mfg। विवरण स्टक मूल्य
SCT3160KLHRC11
DISTI # SCT3160KLHRC11-ND
ROHM SemiconductorAUTOMOTIVE GRADE N-CHANNEL SIC P
RoHS: Compliant
Min Qty: 1
Container: Tube
657In Stock
  • 900:$8.6600
  • 450:$9.2572
  • 25:$11.0488
  • 10:$11.5270
  • 1:$12.5400
SCT3160KLHRC11
DISTI # 02AH4689
ROHM SemiconductorMOSFET, N-CH, 1.2KV, 17A, 175DEG C, 103W,Transistor Polarity:N Channel,Continuous Drain Current Id:17A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.16ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:5.6V,Power RoHS Compliant: Yes9
  • 500:$7.7200
  • 250:$7.9800
  • 100:$9.0800
  • 50:$9.6400
  • 25:$10.6800
  • 10:$10.9900
  • 1:$11.7500
SCT3160KLHRC11
DISTI # 755-SCT3160KLHRC11
ROHM SemiconductorMOSFET 1200V 17A 103W SIC 160mOhm TO-247N
RoHS: Compliant
450
  • 1:$12.5300
  • 10:$11.5200
  • 25:$11.0500
SCT3160KLHRC11
DISTI # TMOS2745
ROHM SemiconductorSiC N-CH 1200V 17A 160mOhm
RoHS: Compliant
Stock DE - 0Stock HK - 0Stock US - 0
  • 450:$8.6100
SCT3160KLHRC11
DISTI # 3052192
ROHM SemiconductorMOSFET, N-CH, 1.2KV, 17A, 175DEG C, 103W0
  • 100:£7.7400
  • 50:£8.0900
  • 10:£8.4300
  • 5:£10.0200
  • 1:£10.4700
SCT3160KLHRC11ROHM SemiconductorMOSFET 1200V 17A 103W SIC 160mOhm TO-247N
RoHS: Compliant
Americas -
    SCT3160KLHRC11
    DISTI # 3052192
    ROHM SemiconductorMOSFET, N-CH, 1.2KV, 17A, 175DEG C, 103W
    RoHS: Compliant
    9
    • 10:$13.0200
    • 5:$13.1100
    • 1:$13.9000
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    अर्डर मा:
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