STGP35HF60W

Mfr. #:: STGP35HF60W
निर्माता:: STMicroelectronics
विवरण:: IGBT Transistors 35A Ultrafast IGBT 600V 100kHz
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: STGP35HF60W डाटा पाना
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थप जानकारी:: STGP35HF60W थप जानकारी STGP35HF60W Product Details

उत्पादन विशेषता
विशेषता मान

निर्माता:: STM माइक्रोइलेक्ट्रोनिक्स

उत्पादन कोटि:: IGBT ट्रान्जिस्टरहरू

RoHS:: Y

प्रविधि:: सि

प्याकेज / केस:: TO-220-3

माउन्टिङ शैली:: प्वाल मार्फत

कन्फिगरेसन:: एकल

कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:: 600 V

कलेक्टर-एमिटर संतृप्ति भोल्टेज:: 1.65 V

अधिकतम गेट एमिटर भोल्टेज:: 20 V

25 C मा निरन्तर कलेक्टर वर्तमान:: 60 A

Pd - शक्ति अपव्यय:: 200 W

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 150 C

शृङ्खला:: STGP35HF60W

प्याकेजिङ:: ट्यूब

निरन्तर कलेक्टर वर्तमान आईसी अधिकतम:: 35 A

ब्रान्ड:: STM माइक्रोइलेक्ट्रोनिक्स

गेट-एमिटर चुहावट वर्तमान:: 100 nA

उत्पादन प्रकार:: IGBT ट्रान्जिस्टरहरू

कारखाना प्याक मात्रा:: 1000

उपश्रेणी:: IGBTs

एकाइ वजन:: 0.081130 oz

Tags: STGP3, STGP, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGP35HF60W विवरण

***ical: Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: STGP35HF60W Series 600 V 60 A Flange Mount Ultrafast IGBT - TO-220

***icroelectronics SCT: Short-circuit rugged IGBT, TO-220, Tube

***el Electronic: ANALOG DEVICES - ADUM2401BRWZ - Digital Isolator, Quad, 4 Channel, 50 ns, 2.7 V, 5.5 V, WSOIC, 16 Pins

***r Electronics: Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel

*** Electronic Components: IGBT Transistors 35A Ultrafast IGBT 600V 100kHz

***th Star Micro: Transistor IGBT Chip N-CH 600V 60A 3-Pin (3+Tab) TO-220 Tube

***el Electronic: STMICROELECTRONICS STGP30NC60W IGBT Single Transistor, 30 A, 2.5 V, 200 W, 600 V, TO-220, 3 Pins

***r Electronics: Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, N 600V 30A TO-220; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Ic Continuous a Max: 30A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulsed Current Icm: 200A; Rise Time: 12ns; Termination Type: Through Hole; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V

***ure Electronics: V Series 600 V 30 A Flange Mount Trench Gate Field-Stop IGBT - TO-220

***ical: Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-220AB Tube

***r Electronics: Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ark: Igbt, Single, 600V, 60A, To-220; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:258W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-220; No. Of Pins:3Pins; Rohs Compliant: Yes

***ical: Trans IGBT Chip N-CH 600V 60A 150000mW 3-Pin(3+Tab) TO-220AB Tube

***icroelectronics: 600 V, 30 A high speed trench gate field-stop IGBT

***nell: IGBT, 600V, 60A, TO-220-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018)

***ical: Trans IGBT Chip N-CH 600V 60A 220000mW 3-Pin(3+Tab) TO-220

***ure Electronics: IXGP30N60C3 Series 600 V 6 A Flange Mount High-Speed PT IGBT - TO-220AB

***DA Technology Co., Ltd.: Product Description Demo for Development.

***ure Electronics: IKP40N65H5: 650 V 74 A High Speed 5 IGBT TRENCHSTOPTM 5 Technology-PG-TO220-3

***ical: Trans IGBT Chip N-CH 650V 74A 250000mW 3-Pin(3+Tab) TO-220 Tube

***nsix Microsemi: Insulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, 650V, 40A, TO220-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 255W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3Pins;

***ineon SCT: High Speed 650 V, 40 A hard-switching TRENCHSTOPTM IGBT5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO220-3, RoHS

***ineon: Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding

***ical: Trans IGBT Chip N-CH 650V 74A 250000mW Automotive 3-Pin(3+Tab) TO-220 Tube

***nell: IGBT, 650V, 40A, TO220-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 255W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3Pins;

***ineon SCT: Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications, PG-TO220-3, RoHS

***ineon: Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
STGP35HF60W DISTI # V99:2348_17652373	STMicroelectronics	Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	964	2000:$1.3959 1000:$1.4300 500:$1.7140 250:$1.9430 100:$2.0419 10:$2.3350 1:$3.0360
STGP35HF60W DISTI # V36:1790_06560714	STMicroelectronics	Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	0
STGP35HF60W DISTI # 497-13584-5-ND	STMicroelectronics	IGBT 600V 60A 200W TO220 RoHS: Compliant Min Qty: 1 Container: Tube	1000In Stock	2500:$1.4700 500:$1.8302 100:$2.1499 50:$2.4806 10:$2.6240 1:$2.9200
STGP35HF60W DISTI # 31679867	STMicroelectronics	Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	964	2000:$1.3959 1000:$1.4300 500:$1.7140 250:$1.9430 100:$2.0419 10:$2.3350 5:$2.7599
STGP35HF60W DISTI # STGP35HF60W	STMicroelectronics	Trans IGBT Chip N-CH 650V 60A 3-Pin TO-220 Tube - Rail/Tube (Alt: STGP35HF60W) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	6000:$1.2900 10000:$1.2900 4000:$1.3900 1000:$1.4900 2000:$1.4900
STGP35HF60W DISTI # 89W1472	STMicroelectronics	PTD HIGH VOLTAGE	0	500:$1.3700 250:$1.4100 100:$1.6800 50:$1.9500 25:$2.0700 10:$2.3700 1:$2.7300
STGP35HF60W DISTI # 511-STGP35HF60W	STMicroelectronics	IGBT Transistors 35A Ultrafast IGBT 600V 100kHz RoHS: Compliant	959	1:$2.7800 10:$2.3600 100:$2.0400 250:$1.9400 500:$1.7400 1000:$1.4700

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उपलब्धता

स्टक:: 959
अर्डर मा:: 2942
मात्रा प्रविष्ट गर्नुहोस्:

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सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ २.७८~~; ~~US$ २.७८~~

10: ~~US$ २.३६~~; ~~US$ २३.६०~~

100: ~~US$ २.०४~~; ~~US$ २०४.००~~

250: ~~US$ १.९४~~; ~~US$ ४८५.००~~

500: ~~US$ १.७४~~; ~~US$ ८७०.००~~

1000: ~~US$ १.४७~~; ~~US$ १ ४७०.००~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

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STGP35HF60W

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes