GA20JT12-263

GA20JT12-263
Mfr. #:
GA20JT12-263
निर्माता:
GeneSiC Semiconductor
विवरण:
MOSFET 1200V 45A Standard
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
GA20JT12-263 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
GA20JT12-263 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
GeneSiC सेमीकन्डक्टर
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
SiC
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-7
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
1.2 kV
आईडी - निरन्तर ड्रेन वर्तमान:
45 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
50 mOhms
Vgs - गेट-स्रोत भोल्टेज:
3.44 V
Qg - गेट चार्ज:
104 nC
Pd - शक्ति अपव्यय:
282 W
च्यानल मोड:
वृद्धि
प्याकेजिङ:
रील
शृङ्खला:
GA20JT12
ब्रान्ड:
GeneSiC सेमीकन्डक्टर
पतन समय:
15 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
12 ns
कारखाना प्याक मात्रा:
50
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
25 ns
सामान्य टर्न-अन ढिलाइ समय:
15 ns
एकाइ वजन:
0.056438 oz
Tags
GA20, GA2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
SIC JUNCTION TRANS, 1.2KV, 20A, TO-263
***i-Key
TRANS SJT 1200V 45A
GA20JT12 SiC Carbide Junction Transistors
GeneSiC GA20JT12 SiC Carbide Junction Transistors (SJT) are "Super-High" current gain SiC BJTs developed in 1200V to 10kV ratings. These SJTs are normally-off, compatible with standard MOSFET/IGBT drivers, and have the best temperature-independent switching and blocking performance. The GA20JT12 transistors operate at 175ºC (maximum), provide excellent gain linearity and low output capacitance. Features include gate oxide free SiC switch, optional gate return pin, and suitability for connecting an anti-parallel diode. The GA20JT12 advantages are >20µs short-circuit withstand capability and high amplifier bandwidth. Applications include down-hole oil drilling, motor drives, solar inverters, and induction heating.Learn more
भाग # Mfg। विवरण स्टक मूल्य
GA20JT12-263
DISTI # 1242-1189-ND
GeneSic Semiconductor IncTRANS SJT 1200V 45A
RoHS: Compliant
Min Qty: 1
Container: Tube
252In Stock
  • 100:$31.8388
  • 50:$34.2570
  • 10:$37.2800
  • 1:$40.3000
GA20JT12-263
DISTI # 905-GA20JT12-263
GeneSic Semiconductor IncMOSFET 1200V 45A Standard
RoHS: Compliant
26
  • 1:$35.9200
  • 5:$34.1500
  • 10:$33.2300
  • 25:$32.3100
  • 50:$30.5400
  • 100:$28.3800
  • 250:$26.0500
छवि भाग # विवरण
NTHL080N120SC1

Mfr.#: NTHL080N120SC1

OMO.#: OMO-NTHL080N120SC1

MOSFET SIC MOS 80MW 1200V
SCT10N120

Mfr.#: SCT10N120

OMO.#: OMO-SCT10N120

MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
SCS220AJHRTLL

Mfr.#: SCS220AJHRTLL

OMO.#: OMO-SCS220AJHRTLL

Schottky Diodes & Rectifiers 650V 20A SiC SBD AEC-Q101 Qualified
SCS215AJHRTLL

Mfr.#: SCS215AJHRTLL

OMO.#: OMO-SCS215AJHRTLL

Schottky Diodes & Rectifiers 650V 15A SiC SBD AEC-Q101 Qualified
IDDD10G65C6XTMA1

Mfr.#: IDDD10G65C6XTMA1

OMO.#: OMO-IDDD10G65C6XTMA1

Schottky Diodes & Rectifiers SIC DIODES
IDDD04G65C6XTMA1

Mfr.#: IDDD04G65C6XTMA1

OMO.#: OMO-IDDD04G65C6XTMA1

Schottky Diodes & Rectifiers SIC DIODES
V8PM10SHM3/H

Mfr.#: V8PM10SHM3/H

OMO.#: OMO-V8PM10SHM3-H

Schottky Diodes & Rectifiers 100V 8A TMBS AEC-Q101 Qualified
GA10SICP12-263

Mfr.#: GA10SICP12-263

OMO.#: OMO-GA10SICP12-263

MOSFET 1200V 25A Std SIC CoPak
SCT3080KLGC11

Mfr.#: SCT3080KLGC11

OMO.#: OMO-SCT3080KLGC11

MOSFET N-Ch 1200V SiC 31A 80mOhm TrenchMOS
SCT3080KLGC11

Mfr.#: SCT3080KLGC11

OMO.#: OMO-SCT3080KLGC11-ROHM-SEMI

MOSFET NCH 1.2KV 31A TO247N
उपलब्धता
स्टक:
25
अर्डर मा:
2008
मात्रा प्रविष्ट गर्नुहोस्:
GA20JT12-263 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ३९.५१
US$ ३९.५१
5
US$ ३७.५५
US$ १८७.७५
10
US$ ३६.५५
US$ ३६५.५०
25
US$ ३५.५३
US$ ८८८.२५
बाट सुरु गर्नुहोस्
नवीनतम उत्पादनहरू
Top