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BSC010N04LSATMA1

BSC010N04LSATMA1
Mfr. #:
BSC010N04LSATMA1
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
BSC010N04LSATMA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
BSC010N04LSATMA1 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TDSON-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
40 V
आईडी - निरन्तर ड्रेन वर्तमान:
100 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
1 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1.2 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
133 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
139 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
OptiMOS
प्याकेजिङ:
रील
उचाइ:
1.27 mm
लम्बाइ:
5.9 mm
शृङ्खला:
OptiMOS 5
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
5.15 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
140 S
पतन समय:
9 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
12 ns
कारखाना प्याक मात्रा:
5000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
46 ns
सामान्य टर्न-अन ढिलाइ समय:
10 ns
भाग # उपनाम:
BSC010N04LS SP000928282
एकाइ वजन:
0.003527 oz
Tags
BSC010N0, BSC010, BSC01, BSC0, BSC
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET Transistor, N Channel, 100 A, 40 V, 0.00085 ohm, 10 V, 2 V
***ure Electronics
Single N-Channel 40 V 1 mOhm 95 nC OptiMOS™ Power Mosfet - TDSON-8
***ineon SCT
Infineon's 40V and 60V MOSFET product families feature not only the industry’s lowest RDS(on) but also a perfect switching behavior for fast switching applications, SuperSO8, RoHS
***ineon
New 40V and 60V product families, feature not only the industrys lowest R DS(on) but also a perfect switching behavior for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. | Summary of Features: Optimized for synchronous rectification; 15% lower R DS(on) than alternative devices; 31% improvement of FOM over similar devices; Integrated Schottky-like diode; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control; Or-ing switches
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
40V OptiMOS™ Power MOSFETs
Infineon's 40V OptiMOS Power MOSFETs feature 35% lower RDS(on) and 45% lower Figure of Merit (RDS(on) x Qg) compared to alternative devices. These devices are optimized for synchronous rectification in switched mode power supplies (SMPS) as well as a broad range of industrial applications such as motor control, solar micro inverters and fast switching DC/DC converters. In addition, this new generation of 40V devices offers higher switching frequencies and are enabled which results in even higher power density.  A monolithic integrated Schottky-like diode in the 40V SuperSO8 package (5mm x 6mm) leads to higher efficiency and a drastic reduction of the voltage overshoot. This in turn reduces the need for a snubber circuit and saves engineering effort and cost.Learn More
भाग # Mfg। विवरण स्टक मूल्य
BSC010N04LSATMA1
DISTI # V72:2272_06383113		Infineon Technologies AGTrans MOSFET N-CH 40V 100A 8-Pin TDSON EP T/R
RoHS: Compliant		4346
  • 75000:$1.0812
  • 30000:$1.0839
  • 15000:$1.0865
  • 6000:$1.0892
  • 3000:$1.0919
  • 1000:$1.0946
  • 500:$1.3267
  • 250:$1.4867
  • 100:$1.5640
  • 50:$1.5779
  • 25:$1.7534
  • 10:$1.9482
  • 1:$2.5207
BSC010N04LSATMA1
DISTI # BSC010N04LSATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 40V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		54792In Stock
  • 1000:$1.2309
  • 500:$1.4855
  • 100:$1.8081
  • 10:$2.2500
  • 1:$2.5000
BSC010N04LSATMA1
DISTI # BSC010N04LSATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 40V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		54792In Stock
  • 1000:$1.2309
  • 500:$1.4855
  • 100:$1.8081
  • 10:$2.2500
  • 1:$2.5000
BSC010N04LSATMA1
DISTI # BSC010N04LSATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 40V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		45000In Stock
  • 5000:$1.0714
BSC010N04LSATMA1
DISTI # 33960813		Infineon Technologies AGTrans MOSFET N-CH 40V 100A 8-Pin TDSON EP T/R
RoHS: Compliant		5008
  • 59:$1.3108
BSC010N04LSATMA1
DISTI # 31010707		Infineon Technologies AGTrans MOSFET N-CH 40V 100A 8-Pin TDSON EP T/R
RoHS: Compliant		4346
  • 6000:$1.0892
  • 3000:$1.0919
  • 1000:$1.0946
  • 500:$1.3267
  • 250:$1.4867
  • 100:$1.5640
  • 50:$1.5779
  • 25:$1.7534
  • 10:$1.9482
  • 6:$2.5207
BSC010N04LSATMA1
DISTI # BSC010N04LSATMA1		Infineon Technologies AGTrans MOSFET N-CH 40V 100A 8-Pin TDSON FL T/R - Tape and Reel (Alt: BSC010N04LSATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.9969
  • 30000:$1.0149
  • 20000:$1.0499
  • 10000:$1.0899
  • 5000:$1.1299
BSC010N04LSATMA1
DISTI # 50Y1792		Infineon Technologies AGTrans MOSFET N-CH 40V 100A 8-Pin TDSON FL T/R - Product that comes on tape, but is not reeled (Alt: 50Y1792)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
    BSC010N04LSATMA1
    DISTI # SP000928282    		Infineon Technologies AGTrans MOSFET N-CH 40V 100A 8-Pin TDSON FL T/R (Alt: SP000928282)
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape and Reel    		Europe - 0
    • 50000:€0.8979
    • 30000:€0.9629
    • 20000:€1.0369
    • 10000:€1.1229
    • 5000:€1.3479
    BSC010N04LSATMA1
    DISTI # 50Y1792    		Infineon Technologies AGMOSFET, N-CH, 40V, 100A, 150DEG C, 139W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):850µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes5008
    • 1000:$1.4300
    • 500:$1.6900
    • 250:$1.8100
    • 100:$1.9100
    • 50:$2.0500
    • 25:$2.1900
    • 10:$2.3300
    • 1:$2.7200
    BSC010N04LSATMA1
    DISTI # 726-BSC010N04LSATMA1    		Infineon Technologies AGMOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
    RoHS: Compliant    		16740
    • 1:$2.3100
    • 10:$1.9600
    • 100:$1.5700
    • 500:$1.3700
    • 1000:$1.1300
    BSC010N04LS
    DISTI # 726-BSC010N04LS    		Infineon Technologies AGMOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
    RoHS: Compliant    		403
    • 1:$2.3100
    • 10:$1.9600
    • 100:$1.5700
    • 500:$1.3700
    • 1000:$1.1300
    BSC010N04LSATMA1
    DISTI # 9064381    		Infineon Technologies AGMOSFET N-CHANNEL 40V 38A OPTIMOS TDSON8, PK260
    • 2500:£0.8740
    • 1250:£0.8960
    • 250:£1.0960
    • 50:£1.3440
    • 10:£1.5250
    BSC010N04LSATMA1
    DISTI # 9064381P    		Infineon Technologies AGMOSFET N-CHANNEL 40V 38A OPTIMOS TDSON8, RL22430
    • 2500:£0.8740
    • 1250:£0.8960
    • 250:£1.0960
    • 50:£1.3440
    BSC010N04LSATMA1
    DISTI # 2480704    		Infineon Technologies AGMOSFET, N-CH, 40V, 100A, TDSON-817801
    • 500:£1.0700
    • 250:£1.1500
    • 100:£1.2200
    • 10:£1.5200
    • 1:£2.0300
    BSC010N04LSATMA1
    DISTI # 2480704    		Infineon Technologies AGMOSFET, N-CH, 40V, 100A, TDSON-8
    RoHS: Compliant    		13644
    • 5000:$1.6700
    • 1000:$1.7000
    • 500:$2.0600
    • 100:$2.3700
    • 10:$2.9500
    • 1:$3.4800
    BSC010N04LSATMA1
    DISTI # 2480704RL    		Infineon Technologies AGMOSFET, N-CH, 40V, 100A, TDSON-8
    RoHS: Compliant    		0
    • 5000:$1.6700
    • 1000:$1.7000
    • 500:$2.0600
    • 100:$2.3700
    • 10:$2.9500
    • 1:$3.4800
    छवि भाग # विवरण
    DFLS130L-7

    Mfr.#: DFLS130L-7

    OMO.#: OMO-DFLS130L-7

    		 Schottky Diodes & Rectifiers 1A 30V
    ERJ-3EKF1001V

    Mfr.#: ERJ-3EKF1001V

    OMO.#: OMO-ERJ-3EKF1001V

    		 Thick Film Resistors - SMD 0603 1Kohms 1% AEC-Q200
    RC0603FR-071KL

    Mfr.#: RC0603FR-071KL

    OMO.#: OMO-RC0603FR-071KL

    		 Thick Film Resistors - SMD 1K OHM 1%
    105310-1204

    Mfr.#: 105310-1204

    OMO.#: OMO-105310-1204-1190

    		 Nano-Fit Vertical Header, Through Hole, 2.50mm, Dual Row, 4 Circuit, Gold Plating
    105310-2208

    Mfr.#: 105310-2208

    OMO.#: OMO-105310-2208-393

    		 Conn Wire to Board HDR 8 POS 2.5mm Solder ST Thru-Hole Tray
    DFLS130L-7

    Mfr.#: DFLS130L-7

    OMO.#: OMO-DFLS130L-7-DIODES

    		 DIODE SCHOTTKY 30V 1A POWERDI123
    SRP1265A-100M

    Mfr.#: SRP1265A-100M

    OMO.#: OMO-SRP1265A-100M-BOURNS

    		 Fixed Inductors 10uH 20% SMD 1265
    ERJ-3EKF1001V

    Mfr.#: ERJ-3EKF1001V

    OMO.#: OMO-ERJ-3EKF1001V-PANASONIC

    		 Thick Film Resistors - SMD 0603 1Kohms 1% Tol
    ERJ-3EKF1002V

    Mfr.#: ERJ-3EKF1002V

    OMO.#: OMO-ERJ-3EKF1002V-PANASONIC

    		 Thick Film Resistors - SMD 0603 10Kohms 1% Tol
    RC0603FR-071KL

    Mfr.#: RC0603FR-071KL

    OMO.#: OMO-RC0603FR-071KL-YAGEO

    		 Thick Film Resistors - SMD 1K OHM 1%
    उपलब्धता
    स्टक:
    15
    अर्डर मा:
    1998
    मात्रा प्रविष्ट गर्नुहोस्:
    BSC010N04LSATMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
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    1
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    10
    US$ १.९६
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    100
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    500
    US$ १.३७
    US$ ६८५.००
    1000
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