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IXFT26N100XHV

IXFT26N100XHV
Mfr. #:
IXFT26N100XHV
निर्माता:
Littelfuse
विवरण:
MOSFET 1000V 26A TO-268HV Power MOSFET
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IXFT26N100XHV डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IXFT26N100XHV थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
IXYS
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-268HV-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
1000 V
आईडी - निरन्तर ड्रेन वर्तमान:
8 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
320 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
3.5 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
113 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
860 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
HiPerFET
प्याकेजिङ:
ट्यूब
शृङ्खला:
एक्स-क्लास
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
IXYS
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
11 S
पतन समय:
8 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
20 ns
कारखाना प्याक मात्रा:
1
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
62 ns
सामान्य टर्न-अन ढिलाइ समय:
29 ns
Tags
IXFT26, IXFT2, IXFT, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
X-Class 850V - 1000V Power MOSFETs with HiPerFET™
IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.
भाग # Mfg। विवरण स्टक मूल्य
IXFT26N100XHV
DISTI # IXFT26N100XHV-ND		IXYS CorporationMOSFET 1000V 26A ULTRA JUNCTION
RoHS: Compliant
Min Qty: 1
Container: Tube		30In Stock
  • 510:$9.2800
  • 120:$10.8800
  • 30:$11.8400
  • 10:$12.8000
  • 1:$14.0800
IXFT26N100XHV
DISTI # 747-IXFT26N100XHV		IXYS CorporationMOSFET 1000V 26A TO-268HV Power MOSFET
RoHS: Compliant		58
  • 1:$16.1900
  • 10:$14.7200
  • 25:$13.6100
  • 50:$12.5200
  • 100:$12.2200
  • 250:$11.2000
  • 500:$10.1600
छवि भाग # विवरण
ISL9K3060G3

Mfr.#: ISL9K3060G3

OMO.#: OMO-ISL9K3060G3

 Diodes - General Purpose, Power, Switching 30A 600V
ISL9K3060G3

Mfr.#: ISL9K3060G3

OMO.#: OMO-ISL9K3060G3-ON-SEMICONDUCTOR

 DIODE ARRAY GP 600V 30A TO247
उपलब्धता
स्टक:
58
अर्डर मा:
2041
मात्रा प्रविष्ट गर्नुहोस्:
IXFT26N100XHV को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १६.१९
US$ १६.१९
10
US$ १४.७२
US$ १४७.२०
25
US$ १३.६१
US$ ३४०.२५
50
US$ १२.५२
US$ ६२६.००
100
US$ १२.२२
US$ १ २२२.००
250
US$ ११.२०
US$ २ ८००.००
500
US$ १०.१६
US$ ५ ०८०.००
1000
US$ ९.२८
US$ ९ २८०.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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