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UF3C120080K4S

UF3C120080K4S
Mfr. #:
UF3C120080K4S
निर्माता:
UnitedSiC
विवरण:
MOSFET 1200V 80m? SiC Cascode Fast
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
UF3C120080K4S डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
UF3C120080K4S थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
UnitedSiC
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
SiC
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-247-4
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
1200 V
आईडी - निरन्तर ड्रेन वर्तमान:
33 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
100 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
4 V
Vgs - गेट-स्रोत भोल्टेज:
25 V
Qg - गेट चार्ज:
51 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
254.2 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
योग्यता:
AEC-Q101
प्याकेजिङ:
ट्यूब
शृङ्खला:
UF3C
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
UnitedSiC
पतन समय:
10 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
13 ns
कारखाना प्याक मात्रा:
30
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
43 ns
सामान्य टर्न-अन ढिलाइ समय:
33 ns
Tags
UF3C1200, UF3C1, UF3C, UF3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
UF3C High-Performance SiC FETs
United Silicon Carbide UF3C High-Performance SiC FETs are cascode products that co-package high-performance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge. These devices are excellent for switching inductive loads, and any application requiring standard gate drive. The F3 SiC fast JFETs series exhibits very fast switching using a TO-247, or D2PAK-3L package. Each device features the best reverse recovery characteristics of any device of similar ratings.
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Mfr.#: UJ3C120040K3S

OMO.#: OMO-UJ3C120040K3S-1190

 Transistor: N-JFET/N-MOSFET, SiC, unipolar, cascode, 1.2kV, 47A
उपलब्धता
स्टक:
12
अर्डर मा:
1995
मात्रा प्रविष्ट गर्नुहोस्:
UF3C120080K4S को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ३२.८०
US$ ३२.८०
5
US$ ३१.३३
US$ १५६.६५
10
US$ ३०.३५
US$ ३०३.५०
25
US$ २७.८९
US$ ६९७.२५
50
US$ २७.२३
US$ १ ३६१.५०
100
US$ २५.९२
US$ २ ५९२.००
250
US$ २३.७८
US$ ५ ९४५.००
500
US$ २२.६४
US$ ११ ३२०.००
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