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NSBC124EPDXV6T5G

NSBC124EPDXV6T5G
Mfr. #:
NSBC124EPDXV6T5G
निर्माता:
ON Semiconductor
विवरण:
Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
NSBC124EPDXV6T5G डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NSBC124EPDXV6T5G DatasheetNSBC124EPDXV6T5G Datasheet (P4-P6)NSBC124EPDXV6T5G Datasheet (P7-P9)NSBC124EPDXV6T5G Datasheet (P10)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
ON अर्धचालक
उत्पादन कोटि:
द्विध्रुवी ट्रान्जिस्टर - पूर्व-पक्षपाती
RoHS:
Y
कन्फिगरेसन:
दोहोरो
ट्रान्जिस्टर ध्रुवता:
PNP
विशिष्ट इनपुट प्रतिरोधक:
22 kOhms
विशिष्ट प्रतिरोधी अनुपात:
1
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
SOT-563-6
DC कलेक्टर/बेस गेन hfe न्यूनतम:
60
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
50 V
निरन्तर कलेक्टर वर्तमान:
0.1 A
पीक डीसी कलेक्टर वर्तमान:
100 mA
Pd - शक्ति अपव्यय:
357 mW
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
शृङ्खला:
NSBC124EPDXV6
प्याकेजिङ:
रील
DC वर्तमान लाभ hFE अधिकतम:
60
उचाइ:
0.55 mm
लम्बाइ:
1.6 mm
चौडाइ:
1.2 mm
ब्रान्ड:
ON अर्धचालक
उत्पादन प्रकार:
BJTs - द्विध्रुवी ट्रान्जिस्टर - पूर्व-पक्षपाती
कारखाना प्याक मात्रा:
8000
उपश्रेणी:
ट्रान्जिस्टरहरू
एकाइ वजन:
0.000106 oz
Tags
NSBC124EPDXV6, NSBC124EPDX, NSBC124EP, NSBC124E, NSBC124, NSBC12, NSBC, NSB
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***Yang
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-563 T/R - Tape and Reel
***emi
Complementary Bipolar Digital Transistor (BRT)
***ark
Brt Transistor, 50V, 22K/22Kohm, Sot-963; Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:- Rohs Compliant: Yes
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
***emi
Dual NPN Bipolar Digital Transistor (BRT)
***et
Trans Digital BJT NPN 50V 100mA 6-Pin SOT-563 T/R
***ark
Brt Transistor, 50V, 22K/22Kohm, Sot-563; Transistor Polarity:dual Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:6 Pin Rohs Compliant: Yes
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
***p One Stop Global
Trans Digital BJT PNP 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R
***emi
50V Dual Bipolar Digital Transistor
***ark
Brt Transistor, 50V, 22K/22Kohm, Sot-563; Transistor Polarity:dual Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:6 Pin Rohs Compliant: Yes
***ical
Trans Digital BJT NPN/PNP 50V 100mA 500mW 6-Pin SOT-563 T/R
*** Stop Electro
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***ure Electronics
Bipolar Transistors - Pre-Biased Dual Complementary NPN & PNP Digital
***emi
Complementary Bipolar Digital Transistor (BRT)
***ment14 APAC
Transistor, AEC-Q101, NPN/PNP, 50V, SOT-563; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous
***ark
Brt Transistor, 50V, 47K/10Kohm, Sot-553; Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:10Kohm Rohs Compliant: Yes
***nell
TRANS, AEC-Q101, NPN/PNP, 50V, SOT-563; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.21(Ratio); RF Transistor Case: SOT-563; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***th Star Micro
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the EMD4DXV6T1 series two complementary BRT devices are housed in the SOT-563 package which is ideal for low power surface mount applications where board space is at a premium.
भाग # Mfg। विवरण स्टक मूल्य
NSBC124EPDXV6T5G
DISTI # NSBC124EPDXV6T5G-ND		ON SemiconductorTRANS PREBIAS NPN/PNP SOT563
RoHS: Compliant
Min Qty: 8000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 8000:$0.0977
NSBC124EPDXV6T5G
DISTI # NSBC124EPDXV6T5G		ON SemiconductorTrans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-563 T/R - Tape and Reel (Alt: NSBC124EPDXV6T5G)
RoHS: Compliant
Min Qty: 8000
Container: Reel		Americas - 0
  • 8000:$0.0779
  • 16000:$0.0769
  • 32000:$0.0759
  • 48000:$0.0749
  • 80000:$0.0739
NSBC124EPDXV6T5G
DISTI # 42K2344		ON SemiconductorBRT TRANSISTOR, 50V, 22K/22KOHM, SOT-963,Digital Transistor Polarity:NPN and PNP Complement,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:22kohm,RF Transistor Case:SOT-963 RoHS Compliant: Yes0
  • 1:$0.1200
NSBC124EPDXV6T5GON Semiconductor 
RoHS: Not Compliant		80000
  • 1000:$0.0900
  • 100:$0.1000
  • 500:$0.1000
  • 1:$0.1100
  • 25:$0.1100
NSBC124EPDXV6T5G
DISTI # 863-NSBC124EPDXV6T5G		ON SemiconductorBipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP
RoHS: Compliant		8000
  • 1:$0.3500
  • 10:$0.2660
  • 100:$0.1440
  • 1000:$0.1080
  • 2500:$0.0930
  • 8000:$0.0870
  • 24000:$0.0800
  • 48000:$0.0770
  • 96000:$0.0740
NSBC124EPDXV6T1G
DISTI # 863-NSBC124EPDXV6T1G		ON SemiconductorBipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP
RoHS: Compliant		10770
  • 1:$0.4200
  • 10:$0.2720
  • 100:$0.1170
  • 1000:$0.0900
  • 4000:$0.0680
  • 8000:$0.0610
  • 24000:$0.0570
छवि भाग # विवरण
NSBC124EDXV6T1G

Mfr.#: NSBC124EDXV6T1G

OMO.#: OMO-NSBC124EDXV6T1G

 Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
NSBC124EPDP6T5G

Mfr.#: NSBC124EPDP6T5G

OMO.#: OMO-NSBC124EPDP6T5G

 Bipolar Transistors - Pre-Biased SOT-963 COMP NBRT
NSBC124EPDXV6T1G

Mfr.#: NSBC124EPDXV6T1G

OMO.#: OMO-NSBC124EPDXV6T1G

 Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP
NSBC124EDXV6

Mfr.#: NSBC124EDXV6

OMO.#: OMO-NSBC124EDXV6-1190

 नयाँ र मौलिक
NSBC124EDXV6T1

Mfr.#: NSBC124EDXV6T1

OMO.#: OMO-NSBC124EDXV6T1-ON-SEMICONDUCTOR

 TRANS 2NPN PREBIAS 0.5W SOT563
NSBC124EPDP6T5G

Mfr.#: NSBC124EPDP6T5G

OMO.#: OMO-NSBC124EPDP6T5G-ON-SEMICONDUCTOR

 Bipolar Transistors - Pre-Biased SOT-963 COMP NBRT
NSBC124EPDXV6T5G

Mfr.#: NSBC124EPDXV6T5G

OMO.#: OMO-NSBC124EPDXV6T5G-ON-SEMICONDUCTOR

 Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP
NSBC124EDXV6T5G

Mfr.#: NSBC124EDXV6T5G

OMO.#: OMO-NSBC124EDXV6T5G-ON-SEMICONDUCTOR

 Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
NSBC124EPDXV6T1G

Mfr.#: NSBC124EPDXV6T1G

OMO.#: OMO-NSBC124EPDXV6T1G-ON-SEMICONDUCTOR

 Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP
NSBC124EDXV6T1G

Mfr.#: NSBC124EDXV6T1G

OMO.#: OMO-NSBC124EDXV6T1G-ON-SEMICONDUCTOR

 Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
उपलब्धता
स्टक:
Available
अर्डर मा:
1991
मात्रा प्रविष्ट गर्नुहोस्:
NSBC124EPDXV6T5G को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.३५
US$ ०.३५
10
US$ ०.२७
US$ २.६६
100
US$ ०.१४
US$ १४.४०
1000
US$ ०.११
US$ १०८.००
2500
US$ ०.०९
US$ २३२.५०
बाट सुरु गर्नुहोस्
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