IPD60R1K4C6ATMA1

IPD60R1K4C6ATMA1
Mfr. #:
IPD60R1K4C6ATMA1
निर्माता:
Infineon Technologies
विवरण:
MOSFET LOW POWER_LEGACY
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPD60R1K4C6ATMA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-252-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
3.2 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
1.26 Ohms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2.5 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
9.4 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
28.4 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
CoolMOS
प्याकेजिङ:
रील
उचाइ:
2.3 mm
लम्बाइ:
6.5 mm
शृङ्खला:
CoolMOS C6
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
6.22 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
पतन समय:
20 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
7 ns
कारखाना प्याक मात्रा:
2500
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
40 ns
सामान्य टर्न-अन ढिलाइ समय:
8 ns
भाग # उपनाम:
IPD60R1K4C6 SP001292870
एकाइ वजन:
0.139332 oz
Tags
IPD60R1K4, IPD60R1K, IPD60R1, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 650V 3.2A 3-Pin(2+Tab) TO-252 T/R
***et Europe
Trans MOSFET N-CH 650V 3.2A 3-Pin(2+Tab) TO-252
***ark
Mosfet, N Channel, 600V, 3.2A, To252-3
***Components
MOSFET N-CH 3.2A 650V COOLMOS C6 TO252
***ment14 APAC
MOSFET, N-CH, 600V, 3.2A, TO252-3
***an P&S
600V,3.2A,N-ch power MOSFET
*** Source Electronics
MOSFET N-CH 600V 3.2A TO252-3
***ure Electronics
MOSFET LOW POWER_LEGACY
***ronik
N-CH 600V 3,2A 1400mOhm TO252-3
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
भाग # Mfg। विवरण स्टक मूल्य
IPD60R1K4C6ATMA1
DISTI # V72:2272_06384833
Infineon Technologies AGTrans MOSFET N-CH 650V 3.2A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
2130
  • 1000:$0.4490
  • 500:$0.4852
  • 250:$0.5391
  • 100:$0.5454
  • 25:$0.7782
  • 10:$0.9510
  • 1:$1.1350
IPD60R1K4C6ATMA1
DISTI # V36:1790_06384833
Infineon Technologies AGTrans MOSFET N-CH 650V 3.2A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
0
    IPD60R1K4C6ATMA1
    DISTI # IPD60R1K4C6ATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 600V 3.2A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    6958In Stock
    • 1000:$0.4054
    • 500:$0.5068
    • 100:$0.6411
    • 10:$0.8360
    • 1:$0.9500
    IPD60R1K4C6ATMA1
    DISTI # IPD60R1K4C6ATMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 600V 3.2A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    6958In Stock
    • 1000:$0.4054
    • 500:$0.5068
    • 100:$0.6411
    • 10:$0.8360
    • 1:$0.9500
    IPD60R1K4C6ATMA1
    DISTI # IPD60R1K4C6ATMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 600V 3.2A TO252-3
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)
    5000In Stock
    • 12500:$0.3280
    • 5000:$0.3321
    • 2500:$0.3567
    IPD60R1K4C6ATMA1
    DISTI # 30679527
    Infineon Technologies AGTrans MOSFET N-CH 650V 3.2A 3-Pin(2+Tab) DPAK T/R
    RoHS: Compliant
    2130
    • 1000:$0.4490
    • 500:$0.4852
    • 250:$0.5391
    • 100:$0.5454
    • 25:$0.7782
    • 20:$0.9510
    IPD60R1K4C6ATMA1
    DISTI # IPD60R1K4C6ATMA1
    Infineon Technologies AGTrans MOSFET N-CH 650V 3.2A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R1K4C6ATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 25000:$0.2969
    • 15000:$0.3029
    • 10000:$0.3129
    • 5000:$0.3249
    • 2500:$0.3369
    IPD60R1K4C6ATMA1
    DISTI # 13AC9044
    Infineon Technologies AGMOSFET, N-CH, 600V, 3.2A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:3.2A,Drain Source Voltage Vds:600V,On Resistance Rds(on):1.26ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes4314
    • 1000:$0.3790
    • 500:$0.4100
    • 250:$0.4420
    • 100:$0.4740
    • 50:$0.5610
    • 25:$0.6470
    • 10:$0.7340
    • 1:$0.8790
    IPD60R1K4C6ATMA1
    DISTI # 726-IPD60R1K4C6ATMA1
    Infineon Technologies AGMOSFET LOW POWER_LEGACY
    RoHS: Compliant
    16851
    • 1:$0.8700
    • 10:$0.7270
    • 100:$0.4690
    • 1000:$0.3750
    IPD60R1K4C6ATMA1
    DISTI # 2726051
    Infineon Technologies AGMOSFET, N-CH, 600V, 3.2A, TO-252-34314
    • 500:£0.3150
    • 250:£0.3430
    • 100:£0.3690
    • 25:£0.5780
    • 5:£0.6420
    IPD60R1K4C6ATMA1
    DISTI # 2726051
    Infineon Technologies AGMOSFET, N-CH, 600V, 3.2A, TO-252-3
    RoHS: Compliant
    4314
    • 1000:$0.6490
    • 500:$0.8110
    • 100:$1.1100
    • 10:$1.4200
    • 1:$1.6300
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    TL331KDBVR

    Mfr.#: TL331KDBVR

    OMO.#: OMO-TL331KDBVR

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    OMO.#: OMO-TL331KDBVR-TEXAS-INSTRUMENTS

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    OMO.#: OMO-B72210S0271K101-EPCOS

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    उपलब्धता
    स्टक:
    17
    अर्डर मा:
    2000
    मात्रा प्रविष्ट गर्नुहोस्:
    IPD60R1K4C6ATMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ०.८७
    US$ ०.८७
    10
    US$ ०.७३
    US$ ७.२७
    100
    US$ ०.४७
    US$ ४६.९०
    1000
    US$ ०.३८
    US$ ३७५.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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