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SIHG33N65E-GE3

SIHG33N65E-GE3
Mfr. #:
SIHG33N65E-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 650V Vds 30V Vgs TO-247AC
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHG33N65E-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHG33N65E-GE3 DatasheetSIHG33N65E-GE3 Datasheet (P4-P6)SIHG33N65E-GE3 Datasheet (P7)
ECAD Model:
थप जानकारी:
SIHG33N65E-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-247AC-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
650 V
आईडी - निरन्तर ड्रेन वर्तमान:
31.6 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
95 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
4 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
114 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
313 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
रील
शृङ्खला:
EF
ब्रान्ड:
Vishay / Siliconix
पतन समय:
71 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
56 ns
कारखाना प्याक मात्रा:
25
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
105 ns
सामान्य टर्न-अन ढिलाइ समय:
32 ns
Tags
SIHG33, SIHG3, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 32.4A 3-Pin(3+Tab) TO-247AC
***et
Trans MOSFET N-CH 650V 32.4A 3-Pin TO-247AC
***i-Key
MOSFET N-CH 650V 32.4A TO-247AC
***ark
Mosfet, N-Ch, 650V, 32.4A, To-247Ac-3; Transistor Polarity:n Channel; Continuous Drain Current Id:32.4A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.09Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 32.4A, TO-247AC-3; Transistor Polarity:N Channel; Continuous Drain Current Id:32.4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.09ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:313W; Transistor Case Style:TO-247AC; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:E-Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited
***nell
MOSFET, CA-N, 650V, 32.4A, TO-247AC-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:32.4A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.09ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:313W; Modello Case Transistor:TO-247AC; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:E-Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata
EF Series High Voltage Power MOSFETs
Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
भाग # Mfg। विवरण स्टक मूल्य
SIHG33N65E-GE3
DISTI # V36:1790_14664699		Vishay IntertechnologiesTrans MOSFET N-CH 650V 32.4A 3-Pin(3+Tab) TO-247AC0
  • 500000:$3.7410
  • 250000:$3.7460
  • 50000:$4.3670
  • 5000:$5.6300
  • 500:$5.8500
SIHG33N65E-GE3
DISTI # SIHG33N65E-GE3-ND		Vishay SiliconixMOSFET N-CH 650V 32.4A TO-247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		868In Stock
  • 2500:$3.7456
  • 500:$4.4659
  • 100:$5.1285
  • 25:$5.9064
  • 10:$6.1950
  • 1:$6.8600
SIHG33N65E-GE3
DISTI # SIHG33N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 32.4A 3-Pin TO-247AC (Alt: SIHG33N65E-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 50
  • 1000:€3.3900
  • 100:€3.4900
  • 500:€3.4900
  • 50:€3.5900
  • 25:€3.9900
  • 10:€4.8900
  • 1:€6.1900
SIHG33N65E-GE3
DISTI # SIHG33N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 32.4A 3-Pin TO-247AC - Tape and Reel (Alt: SIHG33N65E-GE3)
RoHS: Not Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 5000:$3.4900
  • 3000:$3.5900
  • 2000:$3.6900
  • 1000:$3.7900
  • 500:$3.8900
SIHG33N65E-GE3
DISTI # 78-SIHG33N65E-GE3		Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs TO-247AC
RoHS: Compliant		0
  • 1:$6.8600
  • 10:$6.1700
  • 25:$5.6200
  • 100:$5.0700
  • 250:$4.6600
  • 500:$4.2500
  • 1000:$3.7000
SIHG33N65EGE3Vishay IntertechnologiesPower Field-Effect Transistor, 32.4A I(D), 650V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
RoHS: Compliant		500
    SIHG33N65E-GE3
    DISTI # 2576519    		Vishay IntertechnologiesMOSFET, N-CH, 650V, 32.4A, TO-247AC-36
    • 100:£3.8800
    • 50:£4.0900
    • 10:£4.3000
    • 5:£5.2300
    • 1:£5.7400
    SIHG33N65E-GE3
    DISTI # 2576519    		Vishay IntertechnologiesMOSFET, N-CH, 650V, 32.4A, TO-247AC-3
    RoHS: Compliant    		6
    • 100:$9.0700
    • 10:$11.0300
    • 1:$12.2500
    छवि भाग # विवरण
    SIHG33N65EF-GE3

    Mfr.#: SIHG33N65EF-GE3

    OMO.#: OMO-SIHG33N65EF-GE3

    		 MOSFET 650V Vds 30V Vgs TO-247AC
    SIHG33N60EF-GE3

    Mfr.#: SIHG33N60EF-GE3

    OMO.#: OMO-SIHG33N60EF-GE3

    		 MOSFET 600V Vds 30V Vgs TO-247AC
    SIHG33N60E-GE3

    Mfr.#: SIHG33N60E-GE3

    OMO.#: OMO-SIHG33N60E-GE3-VISHAY

    		 Darlington Transistors MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS
    SIHG33N60EF-GE3

    Mfr.#: SIHG33N60EF-GE3

    OMO.#: OMO-SIHG33N60EF-GE3-VISHAY

    		 IGBT Transistors MOSFET 600V 98mOhms@10V 33A N-Ch MOSFET
    SIHG33N60E-E3

    Mfr.#: SIHG33N60E-E3

    OMO.#: OMO-SIHG33N60E-E3-VISHAY

    		 MOSFET N-CH 600V 33A TO247AC
    SIHG33N65EF-GE3

    Mfr.#: SIHG33N65EF-GE3

    OMO.#: OMO-SIHG33N65EF-GE3-VISHAY

    		 MOSFET N-CH 650V 31.6A TO-247AC
    SIHG33N60E

    Mfr.#: SIHG33N60E

    OMO.#: OMO-SIHG33N60E-1190

    		 नयाँ र मौलिक
    SIHG33N60E-G3

    Mfr.#: SIHG33N60E-G3

    OMO.#: OMO-SIHG33N60E-G3-1190

    		 नयाँ र मौलिक
    SIHG33N60E-GE3,SIHG33N60

    Mfr.#: SIHG33N60E-GE3,SIHG33N60

    OMO.#: OMO-SIHG33N60E-GE3-SIHG33N60-1190

    		 नयाँ र मौलिक
    SIHG33N65E-GE3

    Mfr.#: SIHG33N65E-GE3

    OMO.#: OMO-SIHG33N65E-GE3-VISHAY

    		 Trans MOSFET N-CH 650V 32.4A 3-Pin(3+Tab) TO-247AC
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    4000
    मात्रा प्रविष्ट गर्नुहोस्:
    SIHG33N65E-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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    1
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    10
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