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STGWA25H120DF2

STGWA25H120DF2
Mfr. #:
STGWA25H120DF2
निर्माता:
STMicroelectronics
विवरण:
IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
STGWA25H120DF2 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
STGWA25H120DF2 थप जानकारी STGWA25H120DF2 Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता:
STM माइक्रोइलेक्ट्रोनिक्स
उत्पादन कोटि:
IGBT ट्रान्जिस्टरहरू
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
कन्फिगरेसन:
एकल
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
1200 V
कलेक्टर-एमिटर संतृप्ति भोल्टेज:
2.5 V
अधिकतम गेट एमिटर भोल्टेज:
20 V
25 C मा निरन्तर कलेक्टर वर्तमान:
50 A
Pd - शक्ति अपव्यय:
375 W
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
शृङ्खला:
STGWA25H120DF2
ब्रान्ड:
STM माइक्रोइलेक्ट्रोनिक्स
निरन्तर कलेक्टर वर्तमान:
25 A
गेट-एमिटर चुहावट वर्तमान:
250 nA
उत्पादन प्रकार:
IGBT ट्रान्जिस्टरहरू
कारखाना प्याक मात्रा:
600
उपश्रेणी:
IGBTs
एकाइ वजन:
0.215171 oz
Tags
STGWA25, STGWA2, STGWA, STGW, STG
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube
***i-Key
IGBT HB 1200V 25A HS TO247-3
***et Europe
IGBT & POWER BIPOLAR
***ark
Ptd High Voltage
IGBT H Series
STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at TJ=150°C, minimal collector current turn off tail, and very low saturation voltage (Vce(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
भाग # Mfg। विवरण स्टक मूल्य
STGWA25H120DF2
DISTI # 30608543		STMicroelectronicsIGBT HB 1200V 25A HS TO247-310
  • 5:$6.0818
STGWA25H120DF2
DISTI # 497-15548-5-ND		STMicroelectronicsIGBT HB 1200V 25A HS TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		34In Stock
  • 510:$5.2405
  • 120:$6.0182
  • 30:$6.9310
  • 10:$7.2690
  • 1:$8.0500
STGWA25H120DF2
DISTI # V36:1790_06560799		STMicroelectronicsIGBT HB 1200V 25A HS TO247-30
    STGWA25H120DF2
    DISTI # STGWA25H120DF2    		STMicroelectronicsIGBT & POWER BIPOLAR - Rail/Tube (Alt: STGWA25H120DF2)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube    		Americas - 0
    • 3000:$4.0900
    • 6000:$4.0900
    • 1800:$4.2900
    • 1200:$4.5900
    • 600:$4.7900
    STGWA25H120DF2
    DISTI # 26Y5795    		STMicroelectronicsPTD HIGH VOLTAGE0
    • 500:$4.1900
    • 250:$4.3200
    • 100:$5.1600
    • 50:$5.5400
    • 25:$5.9300
    • 10:$6.5100
    • 1:$7.2500
    STGWA25H120DF2
    DISTI # 511-STGWA25H120DF2    		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed117
    • 1:$7.6600
    • 10:$6.9200
    • 25:$6.6000
    • 100:$5.7300
    • 250:$5.4700
    • 500:$4.9900
    • 1000:$4.3400
    STGWA25H120DF2STMicroelectronicsInsulated Gate Bipolar Transistor
    RoHS: Compliant    		600
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      733
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      मात्रा प्रविष्ट गर्नुहोस्:
      STGWA25H120DF2 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
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      1
      US$ ७.६६
      US$ ७.६६
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      US$ ६.६०
      US$ १६५.००
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      US$ ५.७३
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      250
      US$ ५.४७
      US$ १ ३६७.५०
      500
      US$ ४.९९
      US$ २ ४९५.००
      1000
      US$ ४.३४
      US$ ४ ३४०.००
      2500
      US$ ४.१८
      US$ १० ४५०.००
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