IPB019N06L3 G

Mfr. #:: IPB019N06L3 G
निर्माता:: Infineon Technologies
विवरण:: MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: IPB019N06L3 G डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
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ECAD Model:
थप जानकारी:: IPB019N06L3 G थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता:: इन्फिनोन

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: TO-263-3

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: N- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 60 V

आईडी - निरन्तर ड्रेन वर्तमान:: 120 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 1.6 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 1.2 V

Vgs - गेट-स्रोत भोल्टेज:: 20 V

Qg - गेट चार्ज:: 166 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 175 C

Pd - शक्ति अपव्यय:: 250 W

कन्फिगरेसन:: एकल

च्यानल मोड:: वृद्धि

व्यापार नाम:: OptiMOS

प्याकेजिङ:: रील

उचाइ:: 4.4 mm

लम्बाइ:: 10 mm

शृङ्खला:: OptiMOS 3

ट्रान्जिस्टर प्रकार:: 1 N-Channel

चौडाइ:: 9.25 mm

ब्रान्ड:: Infineon टेक्नोलोजीहरू

फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:: 113 S

पतन समय:: 38 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 79 ns

कारखाना प्याक मात्रा:: 1000

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 131 ns

सामान्य टर्न-अन ढिलाइ समय:: 35 ns

भाग # उपनाम:: IPB019N06L3GATMA1 IPB19N6L3GXT SP000453020

एकाइ वजन:: 0.068654 oz

Tags: IPB019N06L3G, IPB019N06L3, IPB019N06L, IPB019N06, IPB019, IPB01, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB019N06L3 G थप जानकारी

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
IPB019N06L3GATMA1 DISTI # V72:2272_06377428	Infineon Technologies AG	Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	977	500:$2.5240 250:$2.8110 100:$2.9590 25:$3.0720 10:$3.4130 1:$4.4143
IPB019N06L3GATMA1 DISTI # V36:1790_06377428	Infineon Technologies AG	Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0	1000000:$1.8500 500000:$1.8520 100000:$1.9880 10000:$2.2080 1000:$2.2440
IPB019N06L3GATMA1 DISTI # IPB019N06L3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 120A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1792In Stock	500:$2.7405 100:$3.2193 10:$3.9290 1:$4.3700
IPB019N06L3GATMA1 DISTI # IPB019N06L3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 120A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1792In Stock	500:$2.7405 100:$3.2193 10:$3.9290 1:$4.3700
IPB019N06L3GATMA1 DISTI # IPB019N06L3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 120A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	1000In Stock	2000:$2.1318 1000:$2.2440
IPB019N06L3GATMA1 DISTI # 33709822	Infineon Technologies AG	Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	977	3:$4.4143
IPB019N06L3 G DISTI # 31073238	Infineon Technologies AG	Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) TO-263 RoHS: Compliant	78	5:$5.2375
IPB019N06L3GXT DISTI # IPB019N06L3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB019N06L3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	6000:$1.8900 10000:$1.8900 4000:$1.9900 1000:$2.0900 2000:$2.0900
IPB019N06L3GATMA1 DISTI # SP000453020	Infineon Technologies AG	Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R (Alt: SP000453020) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	10000:€1.5900 6000:€1.6900 2000:€1.8900 4000:€1.8900 1000:€1.9900
IPB019N06L3GATMA1 DISTI # 47Y8046	Infineon Technologies AG	MOSFET Transistor, N Channel, 120 A, 60 V, 0.0016 ohm, 10 V, 1.7 V RoHS Compliant: Yes	0
IPB019N06L3 G DISTI # 726-IPB019N06L3G	Infineon Technologies AG	MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 RoHS: Compliant	1050	1:$4.0400 10:$3.4300 100:$2.9700 250:$2.8200 500:$2.5300 1000:$2.1300 2000:$2.0300
IPB019N06L3GATMA1 DISTI # 726-IPB019N06L3GATMA	Infineon Technologies AG	MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 RoHS: Compliant	1639	1:$4.0400 10:$3.4300 100:$2.9700 250:$2.8200 500:$2.5300 1000:$2.1300 2000:$2.0300
IPB019N06L3GATMA1 DISTI # 8275293P	Infineon Technologies AG	MOSFET N-CH 120A 60V OPTIMOS3 TO263, RL	1440	100:£2.0380 50:£2.3480
IPB019N06L3GATMA1 DISTI # IPB019N06L3GATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,60V,120A,250W,PG-TO263-3	683	100:$2.4550 10:$2.8267 3:$3.1983 1:$3.5474
IPB019N06L3GATMA1 DISTI # 2443430	Infineon Technologies AG	MOSFET, N CH, 60V, 120A, TO-263-3 RoHS: Compliant	0	1000:$3.2100 500:$3.8100 250:$4.2500 100:$4.4800 10:$5.1700 1:$6.0900

सम्बन्धित उत्पादनहरु

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	Mfr.#: LMR23625CFDDAR OMO.#: OMO-LMR23625CFDDAR	Switching Voltage Regulators 36V, 2.5A, 2.1MHz Synchronous Regulator
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	Mfr.#: TPS61230ARNSR OMO.#: OMO-TPS61230ARNSR	Switching Voltage Regulators 5-V/6-A High Efficiency Step-Up Converter in 2.0-mm x 2.0-mm QFN Package 7-VQFN-HR -40 to 125
	Mfr.#: RN4020-V/RM123 OMO.#: OMO-RN4020-V-RM123	Bluetooth Modules (802.15.1) Microchip Technology
	Mfr.#: P0419 OMO.#: OMO-P0419	Programmable Logic IC Development Tools Atlas-SoC Kit
	Mfr.#: RM186-SM-01 OMO.#: OMO-RM186-SM-01	RF Modules LoRa/BLE 868MHz LoRa EU version
	Mfr.#: AMC1304M25DW OMO.#: OMO-AMC1304M25DW-TEXAS-INSTRUMENTS	Data Converter ICs - Various Data Acquisition ADCs/DACs - Specialized Reinforced Isolated Modulator w/LDO

उपलब्धता

स्टक:: Available
अर्डर मा:: 1984
मात्रा प्रविष्ट गर्नुहोस्:

IPB019N06L3 G को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

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मात्रा
एकाइ मूल्य
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10: ~~US$ ३.४३~~; ~~US$ ३४.३०~~

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2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

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IPB019N06L3 G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes