SI2319DDS-T1-GE3

Mfr. #:: SI2319DDS-T1-GE3
निर्माता:: Vishay / Siliconix
विवरण:: MOSFET -40V Vds 20V Vgs SOT-23
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SI2319DDS-T1-GE3 डाटा पाना
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HTML Datasheet:: SI2319DDS-T1-GE3 Datasheet SI2319DDS-T1-GE3 Datasheet (P4-P6)SI2319DDS-T1-GE3 Datasheet (P7)
ECAD Model:

उत्पादन विशेषता
विशेषता मान

निर्माता:: विसय

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: SOT-23-3

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: P- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 40 V

आईडी - निरन्तर ड्रेन वर्तमान:: 3.6 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 75 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 1 V

Vgs - गेट-स्रोत भोल्टेज:: 10 V

Qg - गेट चार्ज:: 12.5 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 150 C

Pd - शक्ति अपव्यय:: 1.7 W

कन्फिगरेसन:: एकल

च्यानल मोड:: वृद्धि

प्याकेजिङ:: रील

ट्रान्जिस्टर प्रकार:: 1 P-Channel

ब्रान्ड:: Vishay / Siliconix

फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:: 10 S

पतन समय:: 12 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 20 ns

कारखाना प्याक मात्रा:: 3000

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 20 ns

सामान्य टर्न-अन ढिलाइ समय:: 10 ns

Tags: SI2319D, SI2319, SI231, SI23, SI2

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Step1:
Vacuum Packaging with PL

Step2:
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Step3:
Packaging Boxes

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SI2319DDS-T1-GE3 DISTI # V72:2272_21764897	Vishay Intertechnologies	SI2319DDS-T1-GE3	5630	3000:$0.1560 1000:$0.1794 500:$0.2252 250:$0.2765 100:$0.2879 25:$0.3815 10:$0.4240 1:$0.5517
SI2319DDS-T1-GE3 DISTI # SI2319DDS-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CHAN 40V RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4094In Stock	1000:$0.1986 500:$0.2570 100:$0.3270 10:$0.4380 1:$0.5100
SI2319DDS-T1-GE3 DISTI # SI2319DDS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CHAN 40V RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4094In Stock	1000:$0.1986 500:$0.2570 100:$0.3270 10:$0.4380 1:$0.5100
SI2319DDS-T1-GE3 DISTI # SI2319DDS-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CHAN 40V RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	30000:$0.1512 15000:$0.1531 6000:$0.1644 3000:$0.1758
SI2319DDS-T1-GE3 DISTI # 31593586	Vishay Intertechnologies	SI2319DDS-T1-GE3	6000	6000:$0.1930
SI2319DDS-T1-GE3 DISTI # 31602819	Vishay Intertechnologies	SI2319DDS-T1-GE3	5630	3000:$0.1677 1000:$0.2020 500:$0.2421 250:$0.2975 100:$0.3095 47:$0.4101
SI2319DDS-T1-GE3 DISTI # SI2319DDS-T1-GE3	Vishay Intertechnologies	P-CHANNEL 40 V (D-S) MOSFET - Tape and Reel (Alt: SI2319DDS-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	60000:$0.1379 30000:$0.1419 18000:$0.1459 12000:$0.1519 6000:$0.1569
SI2319DDS-T1-GE3 DISTI # 59AC7475	Vishay Intertechnologies	P-CHANNEL 40-V (D-S) MOSFET	0	50000:$0.1400 30000:$0.1460 20000:$0.1570 10000:$0.1680 5000:$0.1820 1:$0.1860
SI2319DDS-T1-GE3 DISTI # 78AC6536	Vishay Intertechnologies	MOSFET, P-CH, -40V, -3.6A, 150DEG C,Transistor Polarity:P Channel,Continuous Drain Current Id:-3.6A,Drain Source Voltage Vds:-40V,On Resistance Rds(on):0.062ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,Power RoHS Compliant: Yes	2750	1000:$0.1860 500:$0.2400 250:$0.2670 100:$0.2930 50:$0.3270 25:$0.3600 10:$0.3940 1:$0.5150
SI2319DDS-T1-GE3 DISTI # 78-SI2319DDS-T1-GE3	Vishay Intertechnologies	MOSFET -40V Vds 20V Vgs SOT-23 RoHS: Compliant	7163	1:$0.5100 10:$0.3890 100:$0.2890 500:$0.2370 1000:$0.1830 3000:$0.1670 6000:$0.1560 9000:$0.1450 24000:$0.1380
SI2319DDS-T1-GE3 DISTI # 1783663	Vishay Intertechnologies	P-CHANNEL 40-V (D-S) MOSFET SOT-23 1G, RL	3150	3000:£0.1200
SI2319DDS-T1-GE3 DISTI # 2932885	Vishay Intertechnologies	MOSFET, P-CH, -40V, -3.6A, 150DEG C	2630	500:£0.1750 250:£0.1940 100:£0.2120 25:£0.3070 5:£0.3240
SI2319DDS-T1-GE3 DISTI # 2932885	Vishay Intertechnologies	MOSFET, P-CH, -40V, -3.6A, 150DEG C RoHS: Compliant	2630	1000:$0.2560 500:$0.2710 250:$0.3190 100:$0.3880 25:$0.4950 5:$0.5980

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: 2N7002 OMO.#: OMO-2N7002	MOSFET N-CHANNEL 60V 115mA
	Mfr.#: MBR0520LT1G OMO.#: OMO-MBR0520LT1G	Schottky Diodes & Rectifiers 0.5A 20V
	Mfr.#: MBR120VLSFT1G OMO.#: OMO-MBR120VLSFT1G	Schottky Diodes & Rectifiers 1A 20V
	Mfr.#: F971A106MAAHT3 OMO.#: OMO-F971A106MAAHT3	Tantalum Capacitors - Solid SMD 10V 10uF 20% 1206 ESR=3Ohm AEC-Q200
	Mfr.#: TAJB107K006TNJ OMO.#: OMO-TAJB107K006TNJ	Tantalum Capacitors - Solid SMD 100uF 10% 1210 ESR=1.4Ohm AEC-Q200
	Mfr.#: ESP32-WROOM-32U OMO.#: OMO-ESP32-WROOM-32U	WiFi Modules (802.11) SMD Module, ESP32-D0WD, 32Mbits SPI flash, UART mode,
	Mfr.#: ESP32-WROOM-32U OMO.#: OMO-ESP32-WROOM-32U-ESPRESSIF-SYSTEMS	WIFI MODULE 32MBITS SPI FLASH
	Mfr.#: SN74AHC1G08DCK3 OMO.#: OMO-SN74AHC1G08DCK3-TEXAS-INSTRUMENTS	LOGIC GATES AND INVERTERS
	Mfr.#: 2N7002 OMO.#: OMO-2N7002-ON-SEMICONDUCTOR	MOSFET N-CH 60V 115MA SOT-23
	Mfr.#: AC0603JR-130RL OMO.#: OMO-AC0603JR-130RL-433	Res Thick Film 0603 0 Ohm Epoxy Pad SMD Automotive T/R

उपलब्धता

स्टक:: Available
अर्डर मा:: 1990
मात्रा प्रविष्ट गर्नुहोस्:

SI2319DDS-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ०.५१~~; ~~US$ ०.५१~~

10: ~~US$ ०.३९~~; ~~US$ ३.८९~~

100: ~~US$ ०.२९~~; ~~US$ २८.९०~~

500: ~~US$ ०.२४~~; ~~US$ ११८.५०~~

1000: ~~US$ ०.१८~~; ~~US$ १८३.००~~

बाट सुरु गर्नुहोस्

SI2319D 7
SI2319 14
SI231 94
SI23 561
SI2 1125

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SI2319DDS-T1-GE3

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Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes