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SIHU7N60E-GE3

SIHU7N60E-GE3
Mfr. #:
SIHU7N60E-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 600V Vds 30V Vgs IPAK (TO-251)
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHU7N60E-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHU7N60E-GE3 DatasheetSIHU7N60E-GE3 Datasheet (P4-P6)SIHU7N60E-GE3 Datasheet (P7-P8)
ECAD Model:
थप जानकारी:
SIHU7N60E-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-251-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
609 V
आईडी - निरन्तर ड्रेन वर्तमान:
7 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
600 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
4 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
20 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
78 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
ट्यूब
शृङ्खला:
E
ब्रान्ड:
Vishay / Siliconix
पतन समय:
14 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
13 ns
कारखाना प्याक मात्रा:
75
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
24 ns
सामान्य टर्न-अन ढिलाइ समय:
13 ns
एकाइ वजन:
0.011640 oz
Tags
SIHU7, SIHU, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    R***m
    R***m
    LB

    item received thanks to the seller

    2019-03-18
    A***V
    A***V
    RU

    Everything works

    2019-04-06
***ical
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) IPAK
***et Europe
Trans MOSFET N-CH 600V 7A 3-Pin IPAK
***ment14 APAC
MOSFET, N CH, 600V, 7A, TO-251-3
***i-Key
MOSFET N-CH 600V 7A TO-251
***ark
N-CHANNEL 600V
***nell
MOSFET, N-CH, 600V, 7A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
भाग # Mfg। विवरण स्टक मूल्य
SIHU7N60E-GE3
DISTI # SIHU7N60E-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 7A TO-251
RoHS: Compliant
Min Qty: 3000
Container: Tube		Temporarily Out of Stock
  • 3000:$0.8363
SIHU7N60E-GE3
DISTI # SIHU7N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin IPAK (Alt: SIHU7N60E-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.6979
  • 500:€0.7069
  • 100:€0.7189
  • 50:€0.7299
  • 25:€0.8259
  • 10:€1.0179
  • 1:€1.4189
SIHU7N60E-GE3
DISTI # SIHU7N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin IPAK - Tape and Reel (Alt: SIHU7N60E-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.7559
  • 18000:$0.7769
  • 12000:$0.7989
  • 6000:$0.8329
  • 3000:$0.8579
SIHU7N60E-GE3
DISTI # 68W7074		Vishay IntertechnologiesMOSFET, N CH, 600V, 7A, TO-251-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:7A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.5ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
  • 12000:$0.7320
  • 6000:$0.8260
  • 3000:$0.8680
  • 1:$0.8740
SIHU7N60E-GE3
DISTI # 68W7073		Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 7A, TO-251-3,Transistor Polarity:N Channel,Continuous Drain Current Id:7A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.5ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
  • 1000:$1.0900
  • 500:$1.2800
  • 250:$1.4600
  • 100:$1.6400
  • 50:$1.8200
  • 25:$1.9700
  • 1:$2.0600
SIHU7N60E-GE3
DISTI # 63W4120		Vishay IntertechnologiesPower MOSFET, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V RoHS Compliant: Yes1488
  • 2500:$0.8070
  • 1000:$0.8960
  • 500:$0.9990
  • 100:$1.1000
  • 50:$1.2200
  • 25:$1.3200
  • 10:$1.4200
  • 1:$1.7100
SIHU7N60E-GE3
DISTI # 78-SIHU7N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs IPAK (TO-251)
RoHS: Compliant		0
  • 3000:$0.7970
  • 6000:$0.7680
SIHU7N60E-E3
DISTI # 78-SIHU7N60E-E3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs IPAK (TO-251)
RoHS: Compliant		0
  • 3000:$0.9000
  • 6000:$0.8660
  • 9000:$0.8330
SIHU7N60E-GE3Vishay Intertechnologies 2100
    SIHU7N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs IPAK (TO-251)
    RoHS: Compliant    		Americas -
      SIHU7N60E-GE3
      DISTI # 2283639      		Vishay IntertechnologiesMOSFET, N-CH, 600V, 7A, IPAK
      RoHS: Compliant      		1488
      • 100:$1.8200
      • 10:$2.3400
      • 1:$2.8200
      SIHU7N60E-GE3
      DISTI # 2283639      		Vishay IntertechnologiesMOSFET, N-CH, 600V, 7A, IPAK1670
      • 500:£0.8830
      • 250:£0.9540
      • 100:£1.0200
      • 25:£1.3100
      • 5:£1.4300
      छवि भाग # विवरण
      SIHU7N60E-GE3

      Mfr.#: SIHU7N60E-GE3

      OMO.#: OMO-SIHU7N60E-GE3

      		 MOSFET 600V Vds 30V Vgs IPAK (TO-251)
      SIHU7N60E-E3

      Mfr.#: SIHU7N60E-E3

      OMO.#: OMO-SIHU7N60E-E3

      		 MOSFET 600V Vds 30V Vgs IPAK (TO-251)
      SIHU7N60E-E3

      Mfr.#: SIHU7N60E-E3

      OMO.#: OMO-SIHU7N60E-E3-VISHAY

      		 RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
      SIHU7N60E

      Mfr.#: SIHU7N60E

      OMO.#: OMO-SIHU7N60E-1190

      		 नयाँ र मौलिक
      SIHU7N60E-GE3

      Mfr.#: SIHU7N60E-GE3

      OMO.#: OMO-SIHU7N60E-GE3-VISHAY

      		 MOSFET N-CH 600V 7A TO-251
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      5500
      मात्रा प्रविष्ट गर्नुहोस्:
      SIHU7N60E-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      3000
      US$ ०.८०
      US$ २ ३९१.००
      6000
      US$ ०.७७
      US$ ४ ६०८.००
      12000
      US$ ०.७४
      US$ ८ ८५६.००
      2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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