FGH25N120FTDS

FGH25N120FTDS
Mfr. #:
FGH25N120FTDS
निर्माता:
ON Semiconductor
विवरण:
IGBT Transistors 1200V 25A Field Stop Trench IGBT
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
FGH25N120FTDS डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
FGH25N120FTDS थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
फेयरचाइल्ड सेमीकन्डक्टर
उत्पादन कोटि
आईसी चिप्स
शृङ्खला
-
प्याकेजिङ
ट्यूब
एकाइ - वजन
0.225401 oz
प्याकेज-केस
TO-247-3
इनपुट-प्रकार
मानक
माउन्टिङ-प्रकार
प्वाल मार्फत
आपूर्तिकर्ता-उपकरण-प्याकेज
TO-247
पावर-अधिकतम
313W
उल्टो-रिकभरी-समय-trr
535ns
वर्तमान-कलेक्टर-आईसी-मैक्स
50A
भोल्टेज-कलेक्टर-एमिटर-ब्रेकडाउन-अधिकतम
1200V
IGBT-प्रकार
ट्रेन्च फिल्ड स्टप
वर्तमान-कलेक्टर-स्पंद-आईसीएम
75A
Vce-on-Max-Vge-Ic
2V @ 15V, 25A
स्विचिङ-ऊर्जा
1.42mJ (on), 1.16mJ (off)
गेट चार्ज
169nC
Td-on-off-25°C
26ns/151ns
परीक्षण अवस्था
600V, 25A, 10 Ohm, 15V
Tags
FGH25N, FGH25, FGH2, FGH
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
भाग # Mfg। विवरण स्टक मूल्य
FGH25N120FTDS
DISTI # FGH25N120FTDS-ND
ON SemiconductorIGBT 1200V 50A 313W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
2In Stock
  • 1:$7.8700
FGH25N120FTDS
DISTI # FGH25N120FTDS
ON SemiconductorTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-3P(N) Tube - Rail/Tube (Alt: FGH25N120FTDS)
RoHS: Compliant
Min Qty: 1
Container: Tube
Americas - 17976
  • 1:$3.4900
  • 10:$3.4900
  • 25:$3.4900
  • 50:$3.4900
  • 100:$3.3900
  • 500:$3.3900
  • 1000:$3.2900
FGH25N120FTDS
DISTI # 64R3073
ON SemiconductorFS1TIGBT TO247 25A 1200V / TUBE0
  • 1:$8.0700
  • 10:$6.6600
  • 100:$5.5500
  • 500:$5.0800
  • 1000:$4.4500
  • 2500:$4.3000
FGH25N120FTDS
DISTI # 512-FGH25N120FTDS
ON SemiconductorIGBT Transistors 1200V 25A Field Stop Trench IGBT
RoHS: Compliant
328
  • 1:$7.4900
  • 10:$6.7700
  • 25:$6.4600
  • 100:$5.6100
  • 250:$5.3600
छवि भाग # विवरण
FGH25N120FTDS

Mfr.#: FGH25N120FTDS

OMO.#: OMO-FGH25N120FTDS

IGBT Transistors 1200V 25A Field Stop Trench IGBT
FGH25N120FTDS

Mfr.#: FGH25N120FTDS

OMO.#: OMO-FGH25N120FTDS-ON-SEMICONDUCTOR

IGBT Transistors 1200V 25A Field Stop Trench IGBT
FGH25N120FTD3

Mfr.#: FGH25N120FTD3

OMO.#: OMO-FGH25N120FTD3-1190

नयाँ र मौलिक
FGH25N120FTDH

Mfr.#: FGH25N120FTDH

OMO.#: OMO-FGH25N120FTDH-1190

नयाँ र मौलिक
उपलब्धता
स्टक:
Available
अर्डर मा:
1000
मात्रा प्रविष्ट गर्नुहोस्:
FGH25N120FTDS को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ४.९४
US$ ४.९४
10
US$ ४.६९
US$ ४६.८८
100
US$ ४.४४
US$ ४४४.१५
500
US$ ४.१९
US$ २ ०९७.४०
1000
US$ ३.९५
US$ ३ ९४८.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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