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IRF7338PBF

IRF7338PBF
Mfr. #:
IRF7338PBF
निर्माता:
Infineon / IR
विवरण:
MOSFET 12V DUAL N- & P- CH HEXFET
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IRF7338PBF डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7338PBF DatasheetIRF7338PBF Datasheet (P4-P6)IRF7338PBF Datasheet (P7-P9)IRF7338PBF Datasheet (P10-P12)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
SO-8
च्यानलहरूको संख्या:
2 Channel
ट्रान्जिस्टर ध्रुवता:
एन-च्यानल, पी-च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
12 V
आईडी - निरन्तर ड्रेन वर्तमान:
6.3 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
34 mOhms
Vgs - गेट-स्रोत भोल्टेज:
8 V
Qg - गेट चार्ज:
5.7 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
2 W
कन्फिगरेसन:
दोहोरो
च्यानल मोड:
वृद्धि
प्याकेजिङ:
ट्यूब
उचाइ:
1.75 mm
लम्बाइ:
4.9 mm
ट्रान्जिस्टर प्रकार:
1 N-Channel, 1 P-Channel
प्रकार:
पावर MOSFET
चौडाइ:
3.9 mm
ब्रान्ड:
Infineon / IR
पतन समय:
34 ns, 25 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
7.6 ns, 13 ns
कारखाना प्याक मात्रा:
4085
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
26 ns, 27 ns
सामान्य टर्न-अन ढिलाइ समय:
6 ns, 9.6 ns
भाग # उपनाम:
SP001565278
एकाइ वजन:
0.019048 oz
Tags
IRF7338, IRF733, IRF73, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N/P-CH 12V 6.3A/3A 8-Pin SOIC
***ernational Rectifier
12V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:12V; Continuous Drain Current, Id:6.3A; On Resistance, Rds(on):34mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SO-8 ;RoHS Compliant: Yes
भाग # Mfg। विवरण स्टक मूल्य
IRF7338PBF
DISTI # IRF7338PBF-ND		Infineon Technologies AGMOSFET N/P-CH 12V 6.3A/3A 8-SOIC
RoHS: Compliant
Min Qty: 4085
Container: Tube		Limited Supply - Call
    IRF7338PBF
    DISTI # 70016987    		Infineon Technologies AG12V DUAL N- AND P- CHANNEL HEXFET POWERMOSFET IN A SO-8 PACKAGE
    RoHS: Compliant    		0
    • 4085:$0.3500
    IRF7338PBF
    DISTI # 942-IRF7338PBF    		Infineon Technologies AGMOSFET 12V DUAL N- & P- CH HEXFET
    RoHS: Compliant    		0
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      		 नयाँ र मौलिक
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      1500
      मात्रा प्रविष्ट गर्नुहोस्:
      IRF7338PBF को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      बाट सुरु गर्नुहोस्
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