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SUM90140E-GE3

SUM90140E-GE3
Mfr. #:
SUM90140E-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 200V Vds 20V Vgs D2PAK (TO-263)
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SUM90140E-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SUM90140E-GE3 DatasheetSUM90140E-GE3 Datasheet (P4-P6)SUM90140E-GE3 Datasheet (P7-P9)
ECAD Model:
थप जानकारी:
SUM90140E-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
200 V
आईडी - निरन्तर ड्रेन वर्तमान:
90 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
13.8 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
96 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
375 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
ThunderFET
प्याकेजिङ:
ट्यूब
शृङ्खला:
SUM
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
75 S
पतन समय:
80 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
112 ns
कारखाना प्याक मात्रा:
800
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
35 ns
सामान्य टर्न-अन ढिलाइ समय:
13 ns
एकाइ वजन:
0.077603 oz
Tags
SUM9, SUM
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
VISHAY SUM90140E-GE3 MOSFET Transistor, N Channel, 90 A, 200 V, 0.0138 ohm, 10 V, 4 VNew
***ure Electronics
N-Channel 200 V 17 mOhm 375 W SMT ThunderFET Power Mosfet - TO-263
***ical
Trans MOSFET N-CH 200V 90A 3-Pin(2+Tab) D2PAK
***ment14 APAC
MOSFET, N-CH, 200V, 90A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Source Voltage Vds:200V; On Resistance
*** Stop Electro
Power Field-Effect Transistor, 90A I(D), 200V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ark
MOSFET, N-CH, 200V, 90A, 175DEG C, 375W; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:90A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***nell
MOSFET, N-CH, 200V, 90A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 90A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.0138ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited
***(Formerly Allied Electronics)
SUM65N20-30-E3 N-channel MOSFET Transistor; 65 A; 200 V; 2+Tab-Pin TO-263
***ure Electronics
SUM65N20 Series 200 V 65 A 30 mOhm Surface Mount N-Channel Mosfet - D2PAK-3
*** Source Electronics
Trans MOSFET N-CH 200V 65A 3-Pin(2+Tab) D2PAK / MOSFET N-CH 200V 65A D2PAK
***nsix Microsemi
Power Field-Effect Transistor, 65A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
N CHANNEL MOSFET, 200V, 65A, TO-263; Tra; N CHANNEL MOSFET, 200V, 65A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:200V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V
***nell
MOSFET, N, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:65A; Resistance, Rds On:0.03ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:140A; Max Repetitive Avalanche Energy:61mJ; Power Dissipation:375W; Power Dissipation on 1 Sq. PCB:3.75W; Power, Pd:375W; Temperature, Tj Max:175°C; Temperature, Tj Min:-55°C; Time, trr Typ:130ns; Typ Capacitance Ciss:5100pF; Voltage, Vds Max:200V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V
***ure Electronics
IRF630S Series N-Channel 200 V 400 mOhms Surface Mount Power Mosfet - TO-263
***ical
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK
***ark
N CHANNEL MOSFET, 200V, 9A, SMD-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***nell
MOSFET, N, 200V, 9A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 74W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; Alternate Case Style: D2-PAK; Current Id Max: 9A; Junction to Case Thermal Resistance A: 1.7°C/W; On State resistance @ Vgs = 10V: 300mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 36A; Voltage Vds: 200V; Voltage Vds Typ: 200V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V
***emi
N-Channel PowerTrench® MOSFET 200V, 62A, 27mΩ
***roFlash
N-Channel 200 V 27 mOhm Surface Mount PowerTrench Mosfet - D2PAK-3
***Yang
Trans MOSFET N-CH 200V 62A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***ment14 APAC
MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:200V; On Resistance Rds(on):22.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:260W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Id Max:62A; Package / Case:D2-PAK; Power Dissipation Pd:260W; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
***ure Electronics
Single N-Channel 150 V 7.2 mOhm 70 nC OptiMOS™ Power Mosfet - D2PAK
***ow.cn
Trans MOSFET N-CH 150V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 100A I(D), 150V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon SCT
The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TO263-3, RoHS
***ment14 APAC
MOSFET, N CH, 100A, 150V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:150V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:300W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***ure Electronics
Single N-Channel 150 V 10.8 mOhm 41 nC OptiMOS™ Power Mosfet - D2PAK
***ow.cn
Trans MOSFET N-CH 150V 83A Automotive 3-Pin(2+Tab) D2PAK T/R
***ment14 APAC
MOSFET, N CH, 150V, 83A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:83A; Source Voltage Vds:150V; On Resistance
***icontronic
Power Field-Effect Transistor, 83A I(D), 150V, 0.0108ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon SCT
The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TO263-3, RoHS
***nell
MOSFET, N CH, 150V, 83A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 83A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.0091ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 214W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***ure Electronics
N-Channel 250 V 42.5 mohm Surface Mount PowerTrench Mosfet - D2PAK-3
***emi
N-Channel PowerTrench® MOSFET 250V, 50A, 42.5mΩ
***Yang
Trans MOSFET N-CH 250V 50A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:50A; Drain Source Voltage, Vds:250V; On Resistance, Rds(on):0.363ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V
***el Electronic
Chip Resistor - Surface Mount 499Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 499 OHM 1% 1/10W 0402
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N, SMD, TO-263; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:250V; Current, Id Cont:50A; Resistance, Rds On:0.0363ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; No. of Pins:2; Power Dissipation:260W; Voltage, Vds Max:250V; Voltage, Vgs th Max:5V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
भाग # Mfg। विवरण स्टक मूल्य
SUM90140E-GE3
DISTI # V72:2272_14664661		Vishay IntertechnologiesTrans MOSFET N-CH 200V 90A 3-Pin(2+Tab) D2PAK42
  • 25:$2.2820
  • 10:$2.5360
  • 1:$3.3616
SUM90140E-GE3
DISTI # V36:1790_14664661		Vishay IntertechnologiesTrans MOSFET N-CH 200V 90A 3-Pin(2+Tab) D2PAK0
  • 800000:$1.5000
  • 400000:$1.5020
  • 80000:$1.6450
  • 8000:$1.8790
  • 800:$1.9170
SUM90140E-GE3
DISTI # SUM90140E-GE3CT-ND		Vishay SiliconixMOSFET N-CH 200V 90A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		605In Stock
  • 100:$2.3198
  • 10:$2.8310
  • 1:$3.1500
SUM90140E-GE3
DISTI # SUM90140E-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 200V 90A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		605In Stock
  • 100:$2.3198
  • 10:$2.8310
  • 1:$3.1500
SUM90140E-GE3
DISTI # SUM90140E-GE3TR-ND		Vishay SiliconixMOSFET N-CH 200V 90A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5600:$1.4784
  • 2400:$1.5361
  • 1600:$1.6170
  • 800:$1.9173
SUM90140E-GE3
DISTI # 27129248		Vishay IntertechnologiesTrans MOSFET N-CH 200V 90A 3-Pin(2+Tab) D2PAK42
  • 5:$3.3616
SUM90140E-GE3
DISTI # SUM90140E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 200V 90A 3-Pin TO-263 T/R - Tape and Reel (Alt: SUM90140E-GE3)
RoHS: Not Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 3200:$1.3900
  • 4800:$1.3900
  • 8000:$1.3900
  • 1600:$1.4900
  • 800:$1.5900
SUM90140E-GE3
DISTI # SUM90140E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 200V 90A 3-Pin TO-263 T/R (Alt: SUM90140E-GE3)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Europe - 0
  • 8000:€1.3900
  • 4800:€1.4900
  • 3200:€1.6900
  • 1600:€1.9900
  • 800:€2.8900
SUM90140E-GE3
DISTI # 86Y1093		Vishay IntertechnologiesMOSFET, N-CH, 200V, 90A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:90A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.0138ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes3394
  • 250:$2.0500
  • 100:$2.1200
  • 50:$2.2700
  • 25:$2.4200
  • 10:$2.5800
  • 1:$3.1100
SUM90140E-GE3
DISTI # 78-SUM90140E-GE3		Vishay IntertechnologiesMOSFET 200V Vds 20V Vgs D2PAK (TO-263)
RoHS: Compliant		4587
  • 1:$3.0800
  • 10:$2.5500
  • 100:$2.1000
  • 250:$2.0300
  • 500:$1.8200
  • 1000:$1.5300
  • 2500:$1.4600
  • 5000:$1.4000
SUM90140E-GE3
DISTI # 1807420		Vishay IntertechnologiesN-CH MOSFET D2PAK 200V17MOHM @ 10V, RL780
  • 2400:£1.3600
  • 800:£1.4000
SUM90140E-GE3
DISTI # 2576515		Vishay IntertechnologiesMOSFET, N-CH, 200V, 90A, TO-263-3
RoHS: Compliant		3394
  • 250:$3.0600
  • 100:$3.1600
  • 10:$3.8400
  • 1:$4.6400
SUM90140E-GE3
DISTI # 2576515		Vishay IntertechnologiesMOSFET, N-CH, 200V, 90A, TO-263-33024
  • 500:£1.4600
  • 250:£1.5800
  • 100:£1.6300
  • 10:£1.9900
  • 1:£2.7000
SUM90140E-GE3Vishay IntertechnologiesMOSFET 200V Vds 20V Vgs D2PAK (TO-263)Americas -
    छवि भाग # विवरण
    CP2102N-A01-GQFN28R

    Mfr.#: CP2102N-A01-GQFN28R

    OMO.#: OMO-CP2102N-A01-GQFN28R

    		 USB Interface IC USBXpress - USB to UART Bridge QFN28
    IPL60R065P7AUMA1

    Mfr.#: IPL60R065P7AUMA1

    OMO.#: OMO-IPL60R065P7AUMA1

    		 MOSFET HIGH POWER_NEW
    STTH15RQ06G2-TR

    Mfr.#: STTH15RQ06G2-TR

    OMO.#: OMO-STTH15RQ06G2-TR

    		 Rectifiers DFD RECTIFIER
    LTV-356T

    Mfr.#: LTV-356T

    OMO.#: OMO-LTV-356T

    		 Transistor Output Optocouplers Optocoupler Phototrans
    STM32G070KBT6

    Mfr.#: STM32G070KBT6

    OMO.#: OMO-STM32G070KBT6

    		 ARM Microcontrollers - MCU Arm Cortex -M0+ 32-bit MCU, 128 KB Flash, 36 KB RAM, 4x USART, timers, ADC, comm. I/Fs, 2.0-3.6V
    LM5164DDAR

    Mfr.#: LM5164DDAR

    OMO.#: OMO-LM5164DDAR

    		 Switching Voltage Regulators LM5164 PRODUCTION COMMERCIAL
    2465

    Mfr.#: 2465

    OMO.#: OMO-2465

    		 Interface Modules Rechargeable 5V Lipo USB Boost
    STM32G070KBT6

    Mfr.#: STM32G070KBT6

    OMO.#: OMO-STM32G070KBT6-182

    		 NEW MCU ARM CORTEX-M0+MCU - Trays (Alt: STM32G070KBT6)
    LTV-356T

    Mfr.#: LTV-356T

    OMO.#: OMO-LTV-356T-LITE-ON

    		 Transistor Output Optocouplers Optocoupler Phototrans
    2465

    Mfr.#: 2465

    OMO.#: OMO-2465-KEYSTONE-ELECTRONICS

    		 Battery Holders, Clips & Contacts Cylindrical Battery Contacts, Clips, Holders & Springs AA Battery. HOLDER 6" LEADS
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1987
    मात्रा प्रविष्ट गर्नुहोस्:
    SUM90140E-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ३.०८
    US$ ३.०८
    10
    US$ २.५५
    US$ २५.५०
    100
    US$ २.१०
    US$ २१०.००
    250
    US$ २.०३
    US$ ५०७.५०
    500
    US$ १.८२
    US$ ९१०.००
    1000
    US$ १.५३
    US$ १ ५३०.००
    2500
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    5000
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    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
    बाट सुरु गर्नुहोस्
    नवीनतम उत्पादनहरू
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      Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
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