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SI3442BDV-T1-GE3

SI3442BDV-T1-GE3
Mfr. #:
SI3442BDV-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 20V 4.2A 1.67W 57mohm @ 4.5V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI3442BDV-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI3442BDV-T1-GE3 DatasheetSI3442BDV-T1-GE3 Datasheet (P4-P6)SI3442BDV-T1-GE3 Datasheet (P7-P9)
ECAD Model:
थप जानकारी:
SI3442BDV-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TSOP-6
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
शृङ्खला:
SI3
ब्रान्ड:
Vishay / Siliconix
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
भाग # उपनाम:
SI3442BDV-GE3
एकाइ वजन:
0.000705 oz
Tags
SI3442BDV-T, SI3442B, SI3442, SI344, SI34, SI3
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 20V 3A 6-Pin TSOP T/R
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:4.2A; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):0.057ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N CH,2.5V,4.2A,DIODE,TSOP6; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.67W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.2A; Power Dissipation Pd:1.67W; Voltage Vgs Max:12V
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
भाग # Mfg। विवरण स्टक मूल्य
SI3442BDV-T1-GE3
DISTI # V36:1790_09216639		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3A 6-Pin TSOP T/R
RoHS: Compliant		0
  • 3000000:$0.2045
  • 1500000:$0.2047
  • 300000:$0.2133
  • 30000:$0.2263
  • 3000:$0.2284
SI3442BDV-T1-GE3
DISTI # SI3442BDV-T1-GE3-ND		Vishay SiliconixMOSFET N-CH 20V 3A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.2284
SI3442BDV-T1-GE3
DISTI # SI3442BDV-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3442BDV-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.1919
  • 18000:$0.1969
  • 12000:$0.2029
  • 6000:$0.2109
  • 3000:$0.2179
SI3442BDV-T1-GE3
DISTI # SI3442BDV-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3A 6-Pin TSOP T/R (Alt: SI3442BDV-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.1609
  • 18000:€0.1729
  • 12000:€0.1879
  • 6000:€0.2179
  • 3000:€0.3199
SI3442BDV-T1-GE3
DISTI # 781-SI3442BDV-GE3		Vishay IntertechnologiesMOSFET 20V 4.2A 1.67W 57mohm @ 4.5V
RoHS: Compliant		0
  • 1:$0.6100
  • 10:$0.4900
  • 100:$0.3800
  • 500:$0.3100
  • 1000:$0.2500
  • 3000:$0.2300
  • 6000:$0.2100
  • 9000:$0.2000
SI3442BDV-T1-GE3Vishay Intertechnologies 2173
    छवि भाग # विवरण
    SI3442BDV-T1-E3

    Mfr.#: SI3442BDV-T1-E3

    OMO.#: OMO-SI3442BDV-T1-E3

    		 MOSFET 20V 3A
    SI3442BDV-T1-GE3

    Mfr.#: SI3442BDV-T1-GE3

    OMO.#: OMO-SI3442BDV-T1-GE3

    		 MOSFET 20V 4.2A 1.67W 57mohm @ 4.5V
    SI3442BDV

    Mfr.#: SI3442BDV

    OMO.#: OMO-SI3442BDV-1190

    		 नयाँ र मौलिक
    SI3442BDV-T1

    Mfr.#: SI3442BDV-T1

    OMO.#: OMO-SI3442BDV-T1-1190

    		 नयाँ र मौलिक
    SI3442BDV-T1-E3

    Mfr.#: SI3442BDV-T1-E3

    OMO.#: OMO-SI3442BDV-T1-E3-VISHAY

    		 MOSFET N-CH 20V 3A 6-TSOP
    SI3442BDV-T1-GE3

    Mfr.#: SI3442BDV-T1-GE3

    OMO.#: OMO-SI3442BDV-T1-GE3-VISHAY

    		 MOSFET N-CH 20V 3A 6-TSOP
    SI3442BDV-T1TE3

    Mfr.#: SI3442BDV-T1TE3

    OMO.#: OMO-SI3442BDV-T1TE3-1190

    		 नयाँ र मौलिक
    SI3442BDVT1E3

    Mfr.#: SI3442BDVT1E3

    OMO.#: OMO-SI3442BDVT1E3-1190

    		 Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    3500
    मात्रा प्रविष्ट गर्नुहोस्:
    SI3442BDV-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ०.६१
    US$ ०.६१
    10
    US$ ०.४९
    US$ ४.९०
    100
    US$ ०.३८
    US$ ३८.००
    500
    US$ ०.३१
    US$ १५५.००
    1000
    US$ ०.२५
    US$ २५०.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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