ZXTP2008

ZXTP2008GTA vs ZXTP2008 vs ZXTP2008G

 
PartNumberZXTP2008GTAZXTP2008ZXTP2008G
DescriptionBipolar Transistors - BJT 30V PNP Low Sat
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-223-4--
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max30 V--
Collector Base Voltage VCBO- 50 V--
Emitter Base Voltage VEBO7 V--
Maximum DC Collector Current5.5 A5.5 A-
Gain Bandwidth Product fT110 MHz110 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesZXTP2008ZXTP2008-
DC Current Gain hFE Max300300-
Height1.65 mm--
Length6.7 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width3.7 mm--
BrandDiodes Incorporated--
Continuous Collector Current- 5.5 A- 5.5 A-
Pd Power Dissipation3 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.003951 oz0.000282 oz-
Package Case-TO-261-4, TO-261AA-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-223-
Power Max-3W-
Transistor Type-PNP-
Current Collector Ic Max-5.5A-
Voltage Collector Emitter Breakdown Max-30V-
DC Current Gain hFE Min Ic Vce-100 @ 1A, 1V-
Vce Saturation Max Ib Ic-210mV @ 500mA, 5.5A-
Current Collector Cutoff Max-20nA (ICBO)-
Frequency Transition-110MHz-
Pd Power Dissipation-3 W-
Collector Emitter Voltage VCEO Max-30 V-
Collector Base Voltage VCBO-- 50 V-
Emitter Base Voltage VEBO-7 V-
DC Collector Base Gain hfe Min-100-
निर्माता भाग # विवरण RFQ
Diodes Incorporated
Diodes Incorporated
ZXTP2008ZTA Bipolar Transistors - BJT 30V PNP Low Sat
ZXTP2008GTA Bipolar Transistors - BJT 30V PNP Low Sat
ZXTP2008ZQTA Bipolar Transistors - BJT Pwr Mid Perf Transistor
ZXTP2008 नयाँ र मौलिक
ZXTP2008G नयाँ र मौलिक
ZXTP2008Z नयाँ र मौलिक
ZXTP2008ZTA-CUT TAPE नयाँ र मौलिक
ZXTP2008ZTA Bipolar Transistors - BJT 30V PNP Low Sat
ZXTP2008GTA Bipolar Transistors - BJT 30V PNP Low Sat
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