 | |  | |
| PartNumber | ZXTN25100DGQTA | ZXTN25100DGTA | ZXTN25100DG |
| Description | Bipolar Transistors - BJT 100V NPN High Gain 180V 85mOhm | Bipolar Transistors - BJT NPN 100V HIGH GAIN | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-223-4 | SOT-223-4 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 100 V | 100 V | - |
| Collector Base Voltage VCBO | 180 V | 180 V | - |
| Emitter Base Voltage VEBO | 7 V | 7 V | - |
| Collector Emitter Saturation Voltage | 120 mV | - | - |
| Maximum DC Collector Current | 3 A | 3 A | - |
| Gain Bandwidth Product fT | 175 MHz | 175 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | ZXTN25100 | ZXTN25100 | - |
| DC Current Gain hFE Max | 900 at 10 mA, 2 V | 300 | - |
| Packaging | Reel | Reel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| DC Collector/Base Gain hfe Min | 300 at 10 mA, 2 V | 120 | - |
| Pd Power Dissipation | 1.2 W | 5300 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | Transistors | Transistors | - |
| Height | - | 1.65 mm | - |
| Length | - | 6.7 mm | - |
| Width | - | 3.7 mm | - |
| Unit Weight | - | 0.003951 oz | - |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Diodes Incorporated |
ZXTN25100DGQTA | Bipolar Transistors - BJT 100V NPN High Gain 180V 85mOhm | |
| ZXTN25100DGTA | Bipolar Transistors - BJT NPN 100V HIGH GAIN | ||
| ZXTN25100DG | नयाँ र मौलिक | ||
| ZXTN25100DGTA-CUT TAPE | नयाँ र मौलिक | ||
| ZXTN25100DGTA | Bipolar Transistors - BJT NPN 100V HIGH GAIN | ||
| ZXTN25100DGQTA | Trans GP BJT NPN 100V 3A Automotive 4-Pin(3+Tab) SOT-223 T/R |