ZXMHC6A07

ZXMHC6A07T8TA vs ZXMHC6A07N8TC

 
PartNumberZXMHC6A07T8TAZXMHC6A07N8TC
DescriptionMOSFET 60V UMOS H-BridgeMOSFET Mosfet H-Bridge 60/-60V 1.8/-1.4A
ManufacturerDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseSM-8SO-8
Number of Channels4 Channel4 Channel
Transistor PolarityN-Channel, P-ChannelN-Channel, P-Channel
Vds Drain Source Breakdown Voltage60 V60 V
Id Continuous Drain Current1.8 A, 1.5 A1.8 A, 1.42 A
Rds On Drain Source Resistance300 mOhms, 425 mOhms250 mOhms, 400 mOhms
Vgs th Gate Source Threshold Voltage1 V1 V
Vgs Gate Source Voltage10 V10 V
Qg Gate Charge3.2 nC, 5.1 nC3.2 nC, 5.7 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation1.3 W0.87 W
ConfigurationQuadQuad
Channel ModeEnhancementEnhancement
PackagingReelReel
Height1.6 mm-
Length6.7 mm-
ProductMOSFET Small Signal-
SeriesZXMHC6AZXMHC6
Transistor Type2 N-Channel, 2 P-Channel2 N-Channel, 2 P-Channel
TypeMOSFET-
Width3.7 mm-
BrandDiodes IncorporatedDiodes Incorporated
Forward Transconductance Min2.3 S, 1.8 S2.3 S, 1.8 S
Fall Time2 ns, 5.8 ns2 ns, 5.8 ns
Product TypeMOSFETMOSFET
Rise Time1.4 ns, 2.3 ns1.4 ns, 2.3 ns
Factory Pack Quantity10002500
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time4.9 ns, 13 ns4.9 ns, 13 ns
Typical Turn On Delay Time1.8 ns, 1.6 ns1.8 ns, 1.6 ns
Unit Weight0.002610 oz0.002610 oz
निर्माता भाग # विवरण RFQ
Diodes Incorporated
Diodes Incorporated
ZXMHC6A07T8TA MOSFET 60V UMOS H-Bridge
ZXMHC6A07N8TC MOSFET Mosfet H-Bridge 60/-60V 1.8/-1.4A
ZXMHC6A07N8TC Trans MOSFET N/P-CH 60V 1.8A/1.42A Automotive 8-Pin SO T/R
ZXMHC6A07T8TA Darlington Transistors MOSFET 60V UMOS H-Bridge
ZXMHC6A07 नयाँ र मौलिक
ZXMHC6A07T8 नयाँ र मौलिक
ZXMHC6A07N8TC-CUT TAPE नयाँ र मौलिक
ZXMHC6A07T8TA-CUT TAPE नयाँ र मौलिक
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