| PartNumber | ZXMHC3A01T8TA | ZXMHC3A01N8TC |
| Description | MOSFET 30/30V 3.1/2.3A N & P Channel | MOSFET Mosfet H-Bridge 30/-30V 2.7/-2.1A |
| Manufacturer | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SM-8 | SO-8 |
| Number of Channels | 4 Channel | 4 Channel |
| Transistor Polarity | N-Channel, P-Channel | N-Channel, P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V |
| Id Continuous Drain Current | 3.1 A | 2.72 A, 2.06 A |
| Rds On Drain Source Resistance | 180 mOhms, 330 mOhms | 180 mOhms, 330 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 1.3 W | 10.9 mW |
| Configuration | Quad | Quad |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Product | MOSFET Small Signal | - |
| Series | ZXMHC3A | ZXMHC3 |
| Transistor Type | 2 N-Channel, 2 P-Channel | 2 N-Channel, 2 P-Channel |
| Type | Enhancement Mode Dual Channel | - |
| Brand | Diodes Incorporated | Diodes Incorporated |
| Fall Time | 2.3 ns | 2.9 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 2.3 ns | 2.3 ns |
| Factory Pack Quantity | 1000 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Unit Weight | 0.002610 oz | 0.002610 oz |