VP2450N8

VP2450N8-G vs VP2450N8 vs VP2450N8G

 
PartNumberVP2450N8-GVP2450N8VP2450N8G
DescriptionMOSFET 500V 30OhmMOSFET 500V 30Ohm
ManufacturerMicrochipSUPERTEX-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-89-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current160 mA--
Rds On Drain Source Resistance30 Ohms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage10 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.6 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height1.6 mm--
Length4.6 mm--
ProductMOSFET Small Signal--
Transistor Type1 P-Channel1 P-Channel-
TypeFET--
Width2.6 mm--
BrandMicrochip Technology--
Forward Transconductance Min150 mS--
Fall Time25 ns25 ns-
Product TypeMOSFET--
Rise Time25 ns25 ns-
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time45 ns45 ns-
Typical Turn On Delay Time10 ns10 ns-
Unit Weight0.001862 oz0.001862 oz-
Package Case-SOT-89-3-
Pd Power Dissipation-1.6 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-- 160 mA-
Vds Drain Source Breakdown Voltage-- 500 V-
Rds On Drain Source Resistance-30 Ohms-
निर्माता भाग # विवरण RFQ
Microchip Technology
Microchip Technology
VP2450N8-G MOSFET 500V 30Ohm
VP2450N8 MOSFET 500V 30Ohm
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