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| PartNumber | US6M11TR |
| Description | MOSFET TRANS MOSFET N/P-CH 20V/12V 6PIN |
| Manufacturer | ROHM Semiconductor |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-363T-6 |
| Number of Channels | 2 Channel |
| Transistor Polarity | N-Channel, P-Channel |
| Vds Drain Source Breakdown Voltage | 20 V, 12 V |
| Id Continuous Drain Current | 1.5 A, 1.3 A |
| Rds On Drain Source Resistance | 180 mOhms, 260 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V |
| Vgs Gate Source Voltage | 10 V |
| Qg Gate Charge | 1.8 nC, 2.4 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd Power Dissipation | 1 W |
| Configuration | Dual |
| Packaging | Reel |
| Series | US6M11 |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Brand | ROHM Semiconductor |
| Fall Time | 3 ns, 9 ns |
| Product Type | MOSFET |
| Rise Time | 5 ns, 10 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Typical Turn Off Delay Time | 20 ns, 30 ns |
| Typical Turn On Delay Time | 5 ns, 8 ns |
| Part # Aliases | US6M11 |
| Unit Weight | 0.000265 oz |