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| PartNumber | UMG4N-7 | UMG4N | UMG4N TR |
| Description | Bipolar Transistors - Pre-Biased 150mW 100mA | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | Bipolar Transistors - Pre-Biased | - | - |
| RoHS | Y | - | - |
| Configuration | Dual Common Emitter | - | - |
| Transistor Polarity | NPN | - | - |
| Typical Input Resistor | 10 kOhms | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-353-5 | - | - |
| DC Collector/Base Gain hfe Min | 100 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 100 mA | - | - |
| Peak DC Collector Current | 100 mA | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | UMG4N | - | - |
| Packaging | Reel | - | - |
| DC Current Gain hFE Max | 600 | - | - |
| Height | 1 mm | - | - |
| Length | 2.2 mm | - | - |
| Width | 1.35 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000212 oz | - | - |