| PartNumber | TSM60NB600CF C0G | TSM60NB600CP ROG | TSM60NB600CH C5G |
| Description | MOSFET MOSFET, Single, N-Ch SJ G2, 600V, 8A | MOSFET 600V, 7A, 0.6OHMS N Channel Power Mosfet | MOSFET 600V, 7A, 0,6OHMS N channel Mosfet |
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
| Id Continuous Drain Current | 8 A | 7 A | 7 A |
| Rds On Drain Source Resistance | 440 mOhms | 450 mOhms | 450 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 10 V | 30 V | 30 V |
| Qg Gate Charge | 16 nC | 13 nC | 13 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 41.7 W | 63 W | 63 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Reel | Tube |
| Transistor Type | N-Channel Power MOSFET | 1 N-Channel | 1 N-Channel |
| Brand | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Fall Time | 20 ns | 8.4 ns | 8.4 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 20 ns | 10 ns | 10 ns |
| Factory Pack Quantity | 2000 | 2500 | 3750 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 13 ns | 43 ns | 43 ns |
| Typical Turn On Delay Time | 6.2 ns | 20.8 ns | 20.8 ns |
| Mounting Style | - | SMD/SMT | Through Hole |
| Package / Case | - | TO-252-3 | TO-251-3 |
| Unit Weight | - | 0.011993 oz | 0.011993 oz |