| PartNumber | TSM13ND50CI C0G | TSM13N50ACZ C0G | TSM13N50ACI C0G |
| Description | MOSFET 500V 13A Single NChn Power MOSFET | MOSFET 500V N channel Power Mosfet | MOSFET 500V N channel Power Mosfet |
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | ITO-220-3 | TO-220-3 | ITO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V | 500 V |
| Id Continuous Drain Current | 13 A | 13 A | 13 A |
| Configuration | Single | Single | Single |
| Packaging | Tube | Reel | Reel |
| Series | TSM13ND50CI | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 2000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Rds On Drain Source Resistance | - | 380 mOhms | 380 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 2 V | 2 V |
| Vgs Gate Source Voltage | - | 10 V | 10 V |
| Qg Gate Charge | - | 31 nC | 31 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 52 W | 52 W |
| Channel Mode | - | Enhancement | Enhancement |
| Fall Time | - | 16 ns | 16 ns |
| Rise Time | - | 18 ns | 18 ns |
| Typical Turn Off Delay Time | - | 79 ns | 79 ns |
| Typical Turn On Delay Time | - | 32 ns | 32 ns |
| Unit Weight | - | 0.063493 oz | 0.059966 oz |