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| PartNumber | TSC966CW RPG | TSC966CT A3 | TSC966CT A3G |
| Description | Bipolar Transistors - BJT NPN Silicon Planar Med Power Transistor | Bipolar Transistors - BJT NPN Silicon Planar Med Power Transistor | Bipolar Transistors - BJT NPN Silicon Planar Medium Power Transistor |
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Package / Case | SOT-223-4 | - | TO-92-3 |
| Packaging | Reel | Ammo Pack | Reel |
| Brand | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 2500 | 2000 | 2000 |
| Subcategory | Transistors | Transistors | Transistors |
| Transistor Polarity | - | NPN | NPN |
| Technology | - | - | Si |
| Mounting Style | - | - | Through Hole |
| Configuration | - | - | Single |
| Collector Emitter Voltage VCEO Max | - | - | 400 V |
| Collector Base Voltage VCBO | - | - | 600 V |
| Emitter Base Voltage VEBO | - | - | 7 V |
| Collector Emitter Saturation Voltage | - | - | 0.5 V |
| Maximum DC Collector Current | - | - | 300 mA |
| Gain Bandwidth Product fT | - | - | 50 MHz |
| Minimum Operating Temperature | - | - | - 55 C |
| Maximum Operating Temperature | - | - | + 150 C |
| DC Current Gain hFE Max | - | - | 300 |
| Continuous Collector Current | - | - | 0.3 A |
| DC Collector/Base Gain hfe Min | - | - | 90 |
| Pd Power Dissipation | - | - | 900 mW |
| Unit Weight | - | - | 0.007654 oz |