TPH11006

TPH11006NL,LQ vs TPH11006NL vs TPH11006NLLQ

 
PartNumberTPH11006NL,LQTPH11006NLTPH11006NLLQ
DescriptionMOSFET U-MOSVIII-H 60V 40A 23nC MOSFETMOSFET PWR MOSFET TRANSISTOR
ManufacturerToshibaToshiba Semiconductor and Storage-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOP-Advance-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current40 A--
Rds On Drain Source Resistance17 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge23 nC--
Pd Power Dissipation34 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelDigi-ReelR Alternate Packaging-
Height0.95 mm--
Length5 mm--
SeriesTPH11006NL--
Transistor Type1 N-Channel--
Width5 mm--
BrandToshiba--
Fall Time7.1 ns--
Product TypeMOSFET--
Rise Time4 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time27 ns--
Typical Turn On Delay Time11 ns--
Part # AliasesTPH11006NL,LQ(S--
Unit Weight0.030018 oz--
Package Case-8-PowerVDFN-
Operating Temperature-150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-8-SOP Advance-
FET Type-MOSFET N-Channel, Metal Oxide-
Power Max-1.6W-
Drain to Source Voltage Vdss-60V-
Input Capacitance Ciss Vds-2000pF @ 30V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-17A (Tc)-
Rds On Max Id Vgs-11.4 mOhm @ 8.5A, 10V-
Vgs th Max Id-2.5V @ 200μA-
Gate Charge Qg Vgs-23nC @ 10V-
निर्माता भाग # विवरण RFQ
Toshiba
Toshiba
TPH11006NL,LQ MOSFET U-MOSVIII-H 60V 40A 23nC MOSFET
TPH11006NL नयाँ र मौलिक
TPH11006NL,LQ MOSFET N-CH 60V 17A 8SOP
TPH11006NLLQ MOSFET PWR MOSFET TRANSISTOR
TPH11006NLLQCT-ND नयाँ र मौलिक
TPH11006NLLQDKR-ND नयाँ र मौलिक
TPH11006NLLQTR-ND नयाँ र मौलिक
Top