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| PartNumber | TN2535N8-G | TN2535N8 | TN2535 |
| Description | RF Bipolar Transistors MOSFET 350V 10Ohm | MOSFET 350V 10Ohm | |
| Manufacturer | - | ||
| Product Category | IC Chips | IC Chips | - |
| Packaging | Reel | Reel | - |
| Unit Weight | 0.001862 oz | 0.001862 oz | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package Case | SOT-89-3 | SOT-89-3 | - |
| Technology | Si | Si | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Configuration | Single | Single | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Pd Power Dissipation | 1.6 W | 1.6 W | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Fall Time | 15 ns | 15 ns | - |
| Rise Time | 15 ns | 15 ns | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Id Continuous Drain Current | 283 mA | 283 mA | - |
| Vds Drain Source Breakdown Voltage | 350 V | 350 V | - |
| Rds On Drain Source Resistance | 10 Ohms | 10 Ohms | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Typical Turn Off Delay Time | 25 ns | 25 ns | - |
| Typical Turn On Delay Time | 20 ns | 20 ns | - |
| Channel Mode | Enhancement | Enhancement | - |