| PartNumber | TK62N60W5,S1VF | TK62J60W,S1VQ | TK62N60W,S1VF |
| Description | MOSFET DTMOSIV 600V 45mOhm 61.8A 400W 6500pF | MOSFET N-Ch 61.8A 400W FET 600V 3500pF 180nC | MOSFET DTMOSIV 600V 40mOhm 61.8A 400W 6500pF |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-3PN-3 | TO-247-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
| Id Continuous Drain Current | 61.8 A | 61.8 A | 61.8 A |
| Rds On Drain Source Resistance | 36 mOhms | 33 mOhms | 33 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3.7 V | 3.7 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 205 nC | 180 nC | 180 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 400 W | 30 W | 400 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | DTMOSIV | - | DTMOSIV |
| Series | TK62N60W5 | TK62J60W | TK62N60W |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Toshiba | Toshiba | Toshiba |
| Fall Time | 13 ns | 15 ns | 15 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 190 ns | 58 ns | 58 ns |
| Factory Pack Quantity | 30 | 25 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 250 ns | 310 ns | 310 ns |
| Typical Turn On Delay Time | 270 ns | 115 ns | 115 ns |
| Unit Weight | 0.211644 oz | 0.245577 oz | 1.340411 oz |
| Height | - | 20 mm | 20.95 mm |
| Length | - | 15.5 mm | 15.94 mm |
| Width | - | 4.5 mm | 5.02 mm |