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| PartNumber | TK6A65D(STA4,Q,M) | TK6A80E,S4X | TK6A65W,S5X |
| Description | MOSFET N-Ch FET 650V 4.0s IDSS 10 uA .95 Ohm | MOSFET PLN MOS 800V 1700m (VGS=10V) TO-220SIS | MOSFET Power MOSFET N-Channel |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220FP-3 | TO-220FP-3 | TO-220FP-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 800 V | 650 V |
| Id Continuous Drain Current | 6 A | 6 A | 5.8 A |
| Rds On Drain Source Resistance | 1.11 Ohms | 1.35 Ohms | 850 mOhms |
| Configuration | Single | Single | Single |
| Height | 15 mm | 15 mm | 15 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | TK6A65D | TK6A80E | TK6A65W |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.5 mm | 4.5 mm | 4.5 mm |
| Brand | Toshiba | Toshiba | Toshiba |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.059966 oz | 0.211644 oz | 0.211644 oz |
| Vgs th Gate Source Threshold Voltage | - | 4 V | 2.5 V |
| Vgs Gate Source Voltage | - | 30 V | 30 V |
| Qg Gate Charge | - | 32 nC | 11 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 45 W | 30 W |
| Channel Mode | - | Enhancement | Enhancement |
| Fall Time | - | 15 ns | 4 ns |
| Rise Time | - | 20 ns | 14 ns |
| Typical Turn Off Delay Time | - | 85 ns | 45 ns |
| Typical Turn On Delay Time | - | 55 ns | 34 ns |
| Packaging | - | - | Tube |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Toshiba |
TK6P60W,RVQ | MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC | |
| TK6A65D(STA4,Q,M) | MOSFET N-Ch FET 650V 4.0s IDSS 10 uA .95 Ohm | ||
| TK6A80E,S4X | MOSFET PLN MOS 800V 1700m (VGS=10V) TO-220SIS | ||
| TK6A65W,S5X | MOSFET Power MOSFET N-Channel | ||
| TK6P53D(T6RSS-Q) | MOSFET N-Ch MOS 6A 525V 100W 600pF 1.3 Ohm | ||
| TK6A80E,S4X | MOSFET PLN MOS 800V 1700m (VGS=10V) TO-220SIS | ||
| TK6A65D(STA4,Q,M) | MOSFET N-Ch FET 650V 4.0s IDSS 10 uA .95 Ohm | ||
| TK6P53D(T6RSS-Q) | MOSFET N-Ch MOS 6A 525V 100W 600pF 1.3 Ohm | ||
| TK6P60W,RVQ | Trans MOSFET N-CH Si 600V 6.2A 3-Pin(2+Tab) DPAK | ||
| TK6A80E,S4X(S) | MOSFETs | ||
| TK6A65D(STA4QM) | नयाँ र मौलिक | ||
| TK6A65D(STA4SM) | नयाँ र मौलिक | ||
| TK6A65D,K6A65D, | नयाँ र मौलिक | ||
| TK6A65D,K6A65D,TK6A60W | नयाँ र मौलिक | ||
| TK6A65D,K6A65D,TK6A65,6A | नयाँ र मौलिक | ||
| TK6A65D,TK6A60D,K6A60D,6 | नयाँ र मौलिक | ||
| TK6A65D,TK6A60D,K6A60D,6A65D, | नयाँ र मौलिक | ||
| TK6A65D,TK6A60D,K6A65D,K | नयाँ र मौलिक | ||
| TK6A65D,TK6A60D,TK6A60W, | नयाँ र मौलिक | ||
| TK6A65D,TK80E08K3,K6A65D | नयाँ र मौलिक | ||
| TK6A65DTA4 | नयाँ र मौलिक | ||
| TK6A65W | नयाँ र मौलिक | ||
| TK6A65WS5X(M | नयाँ र मौलिक | ||
| TK6A80E | नयाँ र मौलिक | ||
| TK6A80E S4X(S | नयाँ र मौलिक | ||
| TK6A80ES4X | MOSFET MOSFET TRAN TO-220SIS | ||
| TK6A80ES4X(S | नयाँ र मौलिक | ||
| TK6B60D | नयाँ र मौलिक | ||
| TK6D60D | नयाँ र मौलिक | ||
| TK6N65D 6N65 TK6A60 | नयाँ र मौलिक | ||
| TK6P530 | नयाँ र मौलिक | ||
| TK6P60V,K6P60V | नयाँ र मौलिक | ||
| TK6P60V,RVQ(S | नयाँ र मौलिक | ||
| TK6P60VRVQ | नयाँ र मौलिक | ||
| TK6P60VRVQ(S | नयाँ र मौलिक | ||
| TK6P60W | नयाँ र मौलिक | ||
| TK6P60W RVQ(S | नयाँ र मौलिक | ||
| TK6P60W,K6P60W | नयाँ र मौलिक | ||
| TK6P60W,RGELQ | नयाँ र मौलिक | ||
| TK6P60W,RPAVQ | नयाँ र मौलिक | ||
| TK6P60W,RVQCS | नयाँ र मौलिक | ||
| TK6P60WRGELQ | नयाँ र मौलिक | ||
| TK6P60WRPA4Q | नयाँ र मौलिक | ||
| TK6P60WRPAVQ | नयाँ र मौलिक | ||
| TK6A65D(STA4QM)-ND | नयाँ र मौलिक | ||
| TK6A65WS5X-ND | नयाँ र मौलिक | ||
| TK6A80ES4X-ND | नयाँ र मौलिक | ||
| TK6P53D(T6RSS-Q)-ND | नयाँ र मौलिक | ||
| TK6P53D | नयाँ र मौलिक | ||
| TK6P60V | नयाँ र मौलिक |