 |  | | |
| PartNumber | TK10E60W,S1VX | TK10E60W | TK10E60W,S1VX(S |
| Description | MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 9.7 A | - | - |
| Rds On Drain Source Resistance | 380 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.7 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 20 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 100 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Height | 15.1 mm | - | - |
| Length | 10.16 mm | - | - |
| Series | TK10E60W | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.45 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 5.5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 22 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 75 ns | - | - |
| Typical Turn On Delay Time | 45 ns | - | - |
| Unit Weight | 0.211644 oz | - | - |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Toshiba |
TK10E60W,S1VX | MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC | |
| TK10E60W | नयाँ र मौलिक | ||
| TK10E60W,S1VX(S | नयाँ र मौलिक | ||
| TK10E60W,S1VX | Darlington Transistors MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC | ||
| TK10E60WS1VX | MOSFET POWER MOSFET TRANSISTOR | ||
| TK10E60WS1VX-ND | नयाँ र मौलिक |