 |  | | |
| PartNumber | T1G4020036-FL | T1G4020036-FS | T1G4020036-FL-EVB |
| Description | RF JFET Transistors DC-3.5GHz GaN 2X 120W 36Volt | RF JFET Transistors DC-3.5GHz GaN 2X 120W 36Volt | RF Development Tools |
| Manufacturer | Cree, Inc. | MACOM | - |
| Product Category | RF JFET Transistors | RF JFET Transistors | - |
| RoHS | N | Y | - |
| Transistor Type | HEMT | - | - |
| Technology | GaN | GaN Si | - |
| Gain | 12 dB | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 120 V | - | - |
| Vgs Gate Source Breakdown Voltage | - 10 V, 2 V | - | - |
| Id Continuous Drain Current | 12 A | - | - |
| Output Power | 85 W | - | - |
| Maximum Drain Gate Voltage | 28 V | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Mounting Style | Screw Mount | - | - |
| Package / Case | CG2H30070F | - | - |
| Packaging | Bulk | Tray | - |
| Configuration | Single | - | - |
| Operating Frequency | 0.5 GHz to 3 GHz | - | - |
| Brand | Wolfspeed / Cree | MACOM | - |
| Product Type | RF JFET Transistors | RF JFET Transistors | - |
| Factory Pack Quantity | 1 | 25 | - |
| Subcategory | Transistors | Transistors | - |
| Vgs th Gate Source Threshold Voltage | - 2.8 V | - | - |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Qorvo |
T1G4020036-FL | RF JFET Transistors DC-3.5GHz GaN 2X 120W 36Volt | |
| T1G4020036-FS | RF JFET Transistors DC-3.5GHz GaN 2X 120W 36Volt | ||
| T1G4020036-FL | RF JFET Transistors DC-3.5GHz GaN 2X 120W 36Volt | ||
| T1G4020036-FS | RF JFET Transistors DC-3.5GHz GaN 2X 120W 36Volt | ||
| T1G4020036-FL-EVB | RF Development Tools |