| PartNumber | STW65N60DM6 | STW65N65DM2AG | STW65N80K5 |
| Description | MOSFET N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power MOSFET in a TO-247 package | MOSFET Automotive-grade N-channel 650 V, 0.042 Ohm typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package | MOSFET N-CH 800V 46A |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | TO-247-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 650 V | - |
| Id Continuous Drain Current | 38 A | 60 A | - |
| Rds On Drain Source Resistance | 71 mOhms | 50 mOhms | - |
| Qg Gate Charge | 61 nC | 27 nC | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube | - |
| Series | DM6 | STW65N65DM2AG | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 600 | 600 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Vgs Gate Source Voltage | - | 25 V | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 446 W | - |
| Qualification | - | AEC-Q101 | - |
| Tradename | - | MDmesh | - |
| Height | - | 5.15 mm | - |
| Length | - | 20.15 mm | - |
| Product | - | Power MOSFET | - |
| Type | - | High Voltage | - |
| Width | - | 15.75 mm | - |
| Fall Time | - | 11.5 ns | - |
| Rise Time | - | 13.5 ns | - |
| Typical Turn Off Delay Time | - | 114 ns | - |
| Typical Turn On Delay Time | - | 33 ns | - |
| Unit Weight | - | 1.340411 oz | - |