| PartNumber | STU4N80K5 | STU4N62K3 | STU4N52K3 |
| Description | MOSFET N-Ch 800V 2.1Ohm typ 3A Zener-protected | MOSFET N-Ch 620V 1.7 Ohm 3.8A SuperMESH 3 | MOSFET N-Ch 525V 2.1 Ohm 2.5A SuperMESH 3 |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-251-3 | TO-251-3 | TO-251-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | 620 V | 525 V |
| Id Continuous Drain Current | 3 A | 3.8 A | 2.5 A |
| Rds On Drain Source Resistance | 2.5 Ohms | 2 Ohms | 2.6 Ohms |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 10.5 nC | 22 nC | 11 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 60 W | 70 W | 45 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | MDmesh | SuperMESH | MDmesh |
| Packaging | Tube | Tube | Tube |
| Series | STU4N80K5 | STU4N62K3 | STU4N52K3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Fall Time | 21 ns | 19 ns | 14 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 15 ns | 9 ns | 7 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 36 ns | 29 ns | 21 ns |
| Typical Turn On Delay Time | 16.5 ns | 10 ns | 8 ns |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |