STS5PF30

STS5PF30 vs STS5PF30L vs STS5PF30L(5P30L)

 
PartNumberSTS5PF30STS5PF30LSTS5PF30L(5P30L)
DescriptionMOSFET P-CH 30V 5A 8-SOIC
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryFETs - SingleFETs - Single-
SeriesSTripFETSTripFET-
PackagingDigi-ReelR Alternate PackagingDigi-ReelR Alternate Packaging-
Unit Weight0.002998 oz0.002998 oz-
Mounting StyleSMD/SMTSMD/SMT-
Package Case8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)-
TechnologySiSi-
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-
Mounting TypeSurface MountSurface Mount-
Number of Channels1 Channel1 Channel-
Supplier Device Package8-SO8-SO-
ConfigurationSingle Quad Drain Triple SourceSingle Quad Drain Triple Source-
FET TypeMOSFET P-Channel, Metal OxideMOSFET P-Channel, Metal Oxide-
Power Max2.5W2.5W-
Transistor Type1 P-Channel1 P-Channel-
Drain to Source Voltage Vdss30V30V-
Input Capacitance Ciss Vds1350pF @ 25V1350pF @ 25V-
FET FeatureStandardStandard-
Current Continuous Drain Id 25°C5A (Tc)5A (Tc)-
Rds On Max Id Vgs55 mOhm @ 2.5A, 10V55 mOhm @ 2.5A, 10V-
Vgs th Max Id2.5V @ 250μA2.5V @ 250μA-
Gate Charge Qg Vgs16nC @ 5V16nC @ 5V-
Pd Power Dissipation2.5 W2.5 W-
Maximum Operating Temperature+ 150 C+ 150 C-
Minimum Operating Temperature- 55 C- 55 C-
Fall Time35 ns35 ns-
Rise Time35 ns35 ns-
Vgs Gate Source Voltage16 V16 V-
Id Continuous Drain Current5 A5 A-
Vds Drain Source Breakdown Voltage- 30 V- 30 V-
Rds On Drain Source Resistance80 mOhms80 mOhms-
Transistor PolarityP-ChannelP-Channel-
Typical Turn Off Delay Time125 ns125 ns-
Typical Turn On Delay Time25 ns25 ns-
Forward Transconductance Min13 S13 S-
Channel ModeEnhancementEnhancement-
निर्माता भाग # विवरण RFQ
STS5PF30 नयाँ र मौलिक
STMicroelectronics
STMicroelectronics
STS5PF30L MOSFET P-CH 30V 5A 8-SOIC
STS5PF30L(5P30L) नयाँ र मौलिक
STS5PF30L/BKN नयाँ र मौलिक
STS5PF30L/E नयाँ र मौलिक
STS5PF30LK2 नयाँ र मौलिक
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