| PartNumber | STP23N80K5 | STP23NM50N | STP23NM60N |
| Description | MOSFET N-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in a TO-220 package | MOSFET N-Ch 500V 0.162 Ohm MDmesh II 17A Switch | MOSFET N-CH 600V 19A TO-220 |
| Manufacturer | STMicroelectronics | STMicroelectronics | ST |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | MOSFET (Metal Oxide) |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 800 V | 500 V | - |
| Id Continuous Drain Current | 16 A | 17 A | - |
| Rds On Drain Source Resistance | 280 mOhms | 162 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 30 V | 25 V | - |
| Qg Gate Charge | 33 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 190 W | 125 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Tradename | MDmesh | MDmesh | - |
| Series | STP23N80K5 | STP23NM50N | MDmesh II |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Fall Time | 9 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 9 ns | - | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 48 ns | - | - |
| Typical Turn On Delay Time | 14 ns | - | - |
| Unit Weight | 0.011640 oz | 0.011640 oz | - |
| Packaging | - | Tube | Tube |
| Part Status | - | - | Obsolete |
| FET Type | - | - | N-Channel |
| Drain to Source Voltage (Vdss) | - | - | 600V |
| Current Continuous Drain (Id) @ 25°C | - | - | 19A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - | - | 10V |
| Vgs(th) (Max) @ Id | - | - | 4V @ 250A |
| Gate Charge (Qg) (Max) @ Vgs | - | - | 60nC @ 10V |
| Vgs (Max) | - | - | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | - | - | 2050pF @ 50V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | - | - | 150W (Tc) |
| Rds On (Max) @ Id, Vgs | - | - | 180 mOhm @ 9.5A, 10V |
| Operating Temperature | - | - | 150°C (TJ) |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | TO-220AB |