 |  |  | |
| PartNumber | STLD1 | STLD128DNT4 | STLD125N4F6AG |
| Description | LIN Transceivers IND. & POWER CONV. | Bipolar Transistors - BJT NPN power transistor | MOSFET Automotive-grade N-channel 40 V, 2.4 mOhm typ., 120 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 dual side cooling package |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | LIN Transceivers | Bipolar Transistors - BJT | MOSFET |
| Operating Supply Voltage | 8 V to 18 V | - | - |
| Minimum Operating Temperature | - 40 C | - 65 C | - 55 C |
| Maximum Operating Temperature | + 105 C | + 150 C | + 175 C |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | QFN-24 | DPAK-3 | PowerFLAT-5x6-8 |
| Series | STLD1 | STL128DN | STLD125N4F6AG |
| Type | Power-Line Communication | - | - |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Number of Channels | 2 Channel | - | 1 Channel |
| Number of Drivers | 2 Driver | - | - |
| Number of Receivers | 2 Receiver | - | - |
| Product Type | LIN Transceivers | BJTs - Bipolar Transistors | MOSFET |
| Factory Pack Quantity | 2940 | 2500 | 2500 |
| Subcategory | Interface ICs | Transistors | MOSFETs |
| Supply Voltage Max | 18 V | - | - |
| Supply Voltage Min | 8 V | - | - |
| RoHS | - | Y | Y |
| Transistor Polarity | - | NPN | N-Channel |
| Configuration | - | Single | Single |
| Collector Emitter Voltage VCEO Max | - | 400 V | - |
| Emitter Base Voltage VEBO | - | 18 V | - |
| Maximum DC Collector Current | - | 6 A | - |
| DC Current Gain hFE Max | - | 10 | - |
| Height | - | 2.4 mm | - |
| Length | - | 6.2 mm | - |
| Packaging | - | Reel | - |
| Width | - | 6.6 mm | - |
| Continuous Collector Current | - | 3 A | - |
| DC Collector/Base Gain hfe Min | - | 8 | - |
| Pd Power Dissipation | - | 20 W | 130 W |
| Unit Weight | - | 0.009185 oz | - |
| Technology | - | - | Si |
| Vds Drain Source Breakdown Voltage | - | - | 40 V |
| Id Continuous Drain Current | - | - | 120 A |
| Rds On Drain Source Resistance | - | - | 2.4 mOhms |
| Vgs th Gate Source Threshold Voltage | - | - | 2 V |
| Vgs Gate Source Voltage | - | - | 20 V |
| Qg Gate Charge | - | - | 91 nC |
| Channel Mode | - | - | Enhancement |
| Qualification | - | - | AEC-Q101 |
| Tradename | - | - | STripFET |
| Transistor Type | - | - | 1 N-Channel |
| Fall Time | - | - | 220 ns |
| Rise Time | - | - | 300 ns |
| Typical Turn Off Delay Time | - | - | 255 ns |
| Typical Turn On Delay Time | - | - | 47 ns |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
STMicroelectronics |
STLD1TR | LIN Transceivers IND. & POWER CONV. | |
| STLD1 | LIN Transceivers IND. & POWER CONV. | ||
| STLD128DNT4 | Bipolar Transistors - BJT NPN power transistor | ||
| STLD125N4F6AG | MOSFET Automotive-grade N-channel 40 V, 2.4 mOhm typ., 120 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 dual side cooling package | ||
| STLD128DNT4 | Bipolar Transistors - BJT NPN power transisto | ||
| STLD1 | POWER-LINE COMMUNICATION DUAL LI | ||
| STLD125N4F6AG | MOSFET N-CH 40V 120A POWERFLAT | ||
| STLD1TR | POWER-LINE COMMUNICATION DUAL LI | ||
| STLD1086V12 | नयाँ र मौलिक | ||
| STLD11 | नयाँ र मौलिक | ||
| STLD110N10F7 | Trans MOSFET N-CH 100V 100A 8-Pin Power Flat 5x6 (Alt: STLD110N10F7) | ||
| STLD128DN | नयाँ र मौलिक | ||
| STLD128DN-1 | नयाँ र मौलिक | ||
| STLD128DNCT | नयाँ र मौलिक | ||
| STLD128DNT | नयाँ र मौलिक | ||
| STLD128DNT4G | नयाँ र मौलिक | ||
| STLD18 | नयाँ र मौलिक |