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| PartNumber | STB6NK90ZT4 | STB6NK90Z | STB6NK90Z B6NK90Z |
| Description | MOSFET N-Ch 900 Volt 5.8 A Zener SuperMESH | ||
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | D2PAK-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 900 V | - | - |
| Id Continuous Drain Current | 5.8 A | - | - |
| Rds On Drain Source Resistance | 2 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 46.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 140 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | SuperMESH | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 4.6 mm | - | - |
| Length | 10.4 mm | - | - |
| Series | STB6NK90ZT4 | SuperMESH | - |
| Transistor Type | 1 N-Channel Power MOSFET | 1 N-Channel | - |
| Type | MOSFET | - | - |
| Width | 9.35 mm | - | - |
| Brand | STMicroelectronics | - | - |
| Forward Transconductance Min | 5 S | - | - |
| Fall Time | 20 ns | 20 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 45 ns | 45 ns | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 20 ns | 20 ns | - |
| Typical Turn On Delay Time | 17 ns | 17 ns | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Package Case | - | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | D2PAK | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 140W | - |
| Drain to Source Voltage Vdss | - | 900V | - |
| Input Capacitance Ciss Vds | - | 1350pF @ 25V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 5.8A (Tc) | - |
| Rds On Max Id Vgs | - | 2 Ohm @ 2.9A, 10V | - |
| Vgs th Max Id | - | 4.5V @ 100μA | - |
| Gate Charge Qg Vgs | - | 60.5nC @ 10V | - |
| Pd Power Dissipation | - | 140 W | - |
| Vgs Gate Source Voltage | - | 30 V | - |
| Id Continuous Drain Current | - | 5.8 A | - |
| Vds Drain Source Breakdown Voltage | - | 900 V | - |
| Rds On Drain Source Resistance | - | 2 Ohms | - |
| Qg Gate Charge | - | 46.5 nC | - |
| Forward Transconductance Min | - | 5 S | - |