![]() | ![]() | ||
| PartNumber | STB16NF06LT4 | STB16NF06L | STB16NF06LT |
| Description | MOSFET N-Ch 60 Volt 16 Amp | ||
| Manufacturer | STMicroelectronics | - | STMicroelectronics |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | D2PAK-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 16 A | - | - |
| Rds On Drain Source Resistance | 90 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 7.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 45 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | STripFET | - | - |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Height | 4.6 mm | - | - |
| Length | 10.4 mm | - | - |
| Series | STB16NF06L | - | STripFET |
| Transistor Type | 1 N-Channel Power MOSFET | - | 1 N-Channel |
| Type | MOSFET | - | - |
| Width | 9.35 mm | - | - |
| Brand | STMicroelectronics | - | - |
| Forward Transconductance Min | 17 S | - | - |
| Fall Time | 12.5 ns | - | 12.5 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 37 ns | - | 37 ns |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 20 ns | - | 20 ns |
| Typical Turn On Delay Time | 10 ns | - | 10 ns |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Package Case | - | - | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Operating Temperature | - | - | -55°C ~ 175°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | D2PAK |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 45W |
| Drain to Source Voltage Vdss | - | - | 60V |
| Input Capacitance Ciss Vds | - | - | 345pF @ 25V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 16A (Tc) |
| Rds On Max Id Vgs | - | - | 90 mOhm @ 8A, 10V |
| Vgs th Max Id | - | - | 1V @ 250μA |
| Gate Charge Qg Vgs | - | - | 10nC @ 4.5V |
| Pd Power Dissipation | - | - | 45 W |
| Vgs Gate Source Voltage | - | - | 16 V |
| Id Continuous Drain Current | - | - | 16 A |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Rds On Drain Source Resistance | - | - | 90 mOhms |
| Forward Transconductance Min | - | - | 17 S |