SSM2212C

SSM2212CPZ-R7 vs SSM2212CPZ-RL vs SSM2212CPZ

 
PartNumberSSM2212CPZ-R7SSM2212CPZ-RLSSM2212CPZ
DescriptionBipolar Transistors - BJT Low Noise,Matched Dual NPN TransistorBipolar Transistors - BJT Low Noise,Matched Dual NPN Transistor
ManufacturerAnalog Devices Inc.Analog Devices Inc.Analog Devices Inc.
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Arrays
RoHSYY-
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseLFCSP-16--
Transistor PolarityNPN-NPN
ConfigurationDual-Dual
Collector Emitter Voltage VCEO Max40 V--
Collector Base Voltage VCBO40 V--
Collector Emitter Saturation Voltage50 mV-50 mV
Maximum DC Collector Current20 mA-20 mA
Gain Bandwidth Product fT200 MHz-200 MHz
Minimum Operating Temperature- 40 C-- 40 C
Maximum Operating Temperature+ 85 C-+ 85 C
SeriesSSM2212SSM2212-
DC Current Gain hFE Max2400 at 1 mA, 15 V, 2400 at 1 mA, 15 V-2400 at 1 mA at 15 V 2400 at 1 mA at 15 V
PackagingReelReelDigi-ReelR Alternate Packaging
BrandAnalog DevicesAnalog Devices-
DC Collector/Base Gain hfe Min300 at 1 mA, 15 V, 300 at 1 mA, 15 V--
Moisture SensitiveYes--
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity15005000-
SubcategoryTransistorsTransistors-
Package Case--16-WFQFN Exposed Pad, CSP
Mounting Type--Surface Mount
Supplier Device Package--16-LFCSP-WQ (3x3)
Power Max---
Transistor Type--2 NPN (Dual)
Current Collector Ic Max--20mA
Voltage Collector Emitter Breakdown Max--40V
DC Current Gain hFE Min Ic Vce--300 @ 1mA, 15V
Vce Saturation Max Ib Ic---
Current Collector Cutoff Max---
Frequency Transition--200MHz
Collector Emitter Voltage VCEO Max--40 V
Collector Base Voltage VCBO--40 V
DC Collector Base Gain hfe Min--300 at 1 mA at 15 V 300 at 1 mA at 15 V
निर्माता भाग # विवरण RFQ
Analog Devices Inc.
Analog Devices Inc.
SSM2212CPZ-R7 Bipolar Transistors - BJT Low Noise,Matched Dual NPN Transistor
SSM2212CPZ-RL Bipolar Transistors - BJT Low Noise,Matched Dual NPN Transistor
SSM2212CPZ नयाँ र मौलिक
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