SQ3461

SQ3461EV-T1_GE3 vs SQ3461EV vs SQ3461EV-T1-GE3

 
PartNumberSQ3461EV-T1_GE3SQ3461EVSQ3461EV-T1-GE3
DescriptionMOSFET P Ch -12Vds 8Vgs AEC-Q101 Qualified
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSOP-6--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage12 V--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance21 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage8 V--
Qg Gate Charge28 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation5 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFET--
PackagingReel--
Height1.1 mm--
Length3.05 mm--
SeriesSQ--
Transistor Type1 P-Channel--
Width1.65 mm--
BrandVishay / Siliconix--
Forward Transconductance Min21 S--
Fall Time71 ns--
Product TypeMOSFET--
Rise Time52 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time92 ns--
Typical Turn On Delay Time12 ns--
निर्माता भाग # विवरण RFQ
Vishay / Siliconix
Vishay / Siliconix
SQ3461EV-T1_GE3 MOSFET P Ch -12Vds 8Vgs AEC-Q101 Qualified
SQ3461EV नयाँ र मौलिक
SQ3461EV-T1-GE3 नयाँ र मौलिक
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