| PartNumber | SQ3457EV-T1_GE3 | SQ3460EV-T1_GE3 | SQ3461EV-T1_GE3 |
| Description | MOSFET P-Channel 30V AEC-Q101 Qualified | MOSFET 20V 8A 3.6W AEC-Q101 Qualified | MOSFET P Ch -12Vds 8Vgs AEC-Q101 Qualified |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSOP-6 | TSOP-6 | TSOP-6 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | N-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 20 V | 12 V |
| Id Continuous Drain Current | 6.8 A | 8 A | 8 A |
| Rds On Drain Source Resistance | 35 mOhms | 25 mOhms | 21 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 400 mV | 1 V |
| Vgs Gate Source Voltage | 20 V | 8 V | 8 V |
| Qg Gate Charge | 21 nC | 14 nC | 28 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 5 W | 3.6 W | 5 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SQ | SQ | SQ |
| Transistor Type | 1 P-Channel | 1 N-Channel | 1 P-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 9 S | 28 S | 21 S |
| Fall Time | 6 ns | 8 ns | 71 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 9 ns | 8 ns | 52 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 18 ns | 21 ns | 92 ns |
| Typical Turn On Delay Time | 6 ns | 8 ns | 12 ns |
| Height | - | 1.1 mm | 1.1 mm |
| Length | - | 3.05 mm | 3.05 mm |
| Width | - | 1.65 mm | 1.65 mm |
| Unit Weight | - | 0.000705 oz | - |