SPD07N20G

SPD07N20GBTMA1 vs SPD07N20G

 
PartNumberSPD07N20GBTMA1SPD07N20G
DescriptionMOSFET N-Ch 200V 7A DPAK-2
ManufacturerInfineon-
Product CategoryMOSFET-
RoHSY-
TechnologySi-
Mounting StyleSMD/SMT-
Package / CaseTO-252-3-
Number of Channels1 Channel-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage200 V-
Id Continuous Drain Current7 A-
Rds On Drain Source Resistance300 mOhms-
Vgs th Gate Source Threshold Voltage2.1 V-
Vgs Gate Source Voltage20 V-
Qg Gate Charge31.5 nC-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 175 C-
Pd Power Dissipation40 W-
ConfigurationSingle-
Channel ModeEnhancement-
TradenameSIPMOS-
PackagingReel-
Height2.3 mm-
Length6.5 mm-
Transistor Type1 N-Channel-
Width6.22 mm-
BrandInfineon Technologies-
Forward Transconductance Min3 S-
Fall Time30 ns-
Product TypeMOSFET-
Rise Time40 ns-
Factory Pack Quantity2500-
SubcategoryMOSFETs-
Typical Turn Off Delay Time55 ns-
Typical Turn On Delay Time10 ns-
Part # AliasesG SP000449008 SPD07N20 SPD07N20GXT-
Unit Weight0.139332 oz-
निर्माता भाग # विवरण RFQ
Infineon Technologies
Infineon Technologies
SPD07N20GBTMA1 MOSFET N-Ch 200V 7A DPAK-2
SPD07N20G नयाँ र मौलिक
Infineon Technologies
Infineon Technologies
SPD07N20GBTMA1 MOSFET N-CH 200V 7A TO252
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