 | | |
| PartNumber | SPD07N20GBTMA1 | SPD07N20 |
| Description | MOSFET N-Ch 200V 7A DPAK-2 | MOSFET N-Ch 200V 7A DPAK-2 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V |
| Id Continuous Drain Current | 7 A | 7 A |
| Rds On Drain Source Resistance | 300 mOhms | 400 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.1 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 31.5 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 40 W | 40 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | SIPMOS | - |
| Packaging | Reel | Reel |
| Height | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 3 S | - |
| Fall Time | 30 ns | 30 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 40 ns | 40 ns |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 55 ns | 55 ns |
| Typical Turn On Delay Time | 10 ns | 10 ns |
| Part # Aliases | G SP000449008 SPD07N20 SPD07N20GXT | - |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| Moisture Sensitive | - | Yes |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Infineon Technologies |
SPD07N20GBTMA1 | MOSFET N-Ch 200V 7A DPAK-2 | |
| SPD07N20 | MOSFET N-Ch 200V 7A DPAK-2 | ||
Infineon Technologies |
SPD07N20 | MOSFET N-CH 200V 7A TO-252 | |
| SPD07N20GBTMA1 | MOSFET N-CH 200V 7A TO252 | ||
| SPD07N20 G | MOSFET N-Ch 200V 7A DPAK-2 | ||
| SPD07N20G | नयाँ र मौलिक |