SIZ728

SIZ728DT-T1-GE3 vs SIZ728DT vs SIZ728DTT1GE3

 
PartNumberSIZ728DT-T1-GE3SIZ728DTSIZ728DTT1GE3
DescriptionMOSFET 25V Vds 20V Vgs PowerPAIR 6 x 3.7Power Field-Effect Transistor, 16A I(D), 25V, 0.0077ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ManufacturerVishayVishay Siliconix-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySiSi-
TradenameTrenchFET--
PackagingReelDigi-ReelR Alternate Packaging-
SeriesSIZTrenchFETR-
BrandVishay / Siliconix--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Part # AliasesSIZ728DT-GE3--
Part Aliases-SIZ728DT-GE3-
Mounting Style-SMD/SMT-
Package Case-6-PowerPair-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Number of Channels-2 Channel-
Supplier Device Package-6-PowerPair-
Configuration-Dual-
FET Type-2 N-Channel (Half Bridge)-
Power Max-27W, 48W-
Transistor Type-2 N-Channel-
Drain to Source Voltage Vdss-25V-
Input Capacitance Ciss Vds-890pF @ 12.5V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-16A, 35A-
Rds On Max Id Vgs-7.7 mOhm @ 18A, 10V-
Vgs th Max Id-2.2V @ 250μA-
Gate Charge Qg Vgs-26nC @ 10V-
Pd Power Dissipation-2.5 W 3 W-
Maximum Operating Temperature-+ 150 C-
Minimum Operating Temperature-- 55 C-
Fall Time-10 ns-
Rise Time-15 ns 18 ns-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-14.2 A-
Vds Drain Source Breakdown Voltage-25 V-
Rds On Drain Source Resistance-6.3 mOhms 2.9 mOhms-
Transistor Polarity-N-Channel-
Forward Transconductance Min-37 S 80 S-
निर्माता भाग # विवरण RFQ
Vishay / Siliconix
Vishay / Siliconix
SIZ728DT-T1-GE3 MOSFET 25V Vds 20V Vgs PowerPAIR 6 x 3.7
SIZ728DT नयाँ र मौलिक
Vishay
Vishay
SIZ728DT-T1-GE3 MOSFET 2N-CH 25V 16A 6-POWERPAIR
SIZ728DTT1GE3 Power Field-Effect Transistor, 16A I(D), 25V, 0.0077ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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