SIS7

SIS782DN-T1-GE3 vs SIS78L09

 
PartNumberSIS782DN-T1-GE3SIS78L09
DescriptionMOSFET 30V Vds 20V Vgs PowerPAK 1212-8
ManufacturerVishay-
Product CategoryMOSFET-
RoHSY-
TechnologySi-
Mounting StyleSMD/SMT-
Package / CasePowerPAK-1212-8-
Number of Channels1 Channel-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage30 V-
Id Continuous Drain Current16 A-
Rds On Drain Source Resistance9.5 mOhms-
Vgs th Gate Source Threshold Voltage1 V-
Vgs Gate Source Voltage20 V-
Qg Gate Charge30.5 nC-
Minimum Operating Temperature- 50 C-
Maximum Operating Temperature+ 150 C-
Pd Power Dissipation41 W-
ConfigurationSingle-
Channel ModeEnhancement-
TradenameTrenchFET, PowerPAK-
PackagingReel-
Height1.04 mm-
Length3.3 mm-
SeriesSIS-
Transistor Type1 N-Channel-
Width3.3 mm-
BrandVishay / Siliconix-
Forward Transconductance Min43 S-
Fall Time11 ns-
Product TypeMOSFET-
Rise Time22 ns-
Factory Pack Quantity3000-
SubcategoryMOSFETs-
Typical Turn Off Delay Time13 ns-
Typical Turn On Delay Time11 ns-
Part # AliasesSIS782DN-GE3-
  • बाट सुरु गर्नुहोस्
  • SIS7 50
  • SIS 843
निर्माता भाग # विवरण RFQ
Vishay
Vishay
SIS782DN-T1-GE3 MOSFET N-CH 30V 16A POWERPAK1212
SIS78L09 नयाँ र मौलिक
Top