 |  |  | |
| PartNumber | SIHL630STRL-GE3 | SIHLL110TR-GE3 | SIHLR120-GE3 |
| Description | MOSFET 200V Vds 10V Vgs D2PAK (TO-263) | MOSFET 100V Vds 20V Vgs SOT-223 | MOSFET 100V Vds 10V Vgs DPAK (TO-252) |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | SOT-223-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | 100 V | 100 V |
| Id Continuous Drain Current | 9 A | 1.5 A | 7.7 A |
| Rds On Drain Source Resistance | 400 mOhms | 540 mOhms | 270 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | 1 V |
| Vgs Gate Source Voltage | 10 V | 10 V | 10 V |
| Qg Gate Charge | 40 nC | 6.1 nC | 12 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 74 W | 3.1 W | 42 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | - | - |
| Height | 4.83 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | SIH | - | SIH |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.65 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 4.8 S | 0.57 S | 4.4 S |
| Fall Time | 33 ns | 18 ns | 27 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 57 ns | 47 ns | 64 ns |
| Factory Pack Quantity | 800 | 1 | 1 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 38 ns | 16 ns | 21 ns |
| Typical Turn On Delay Time | 8 ns | 9.3 ns | 9.8 ns |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHL630STRL-GE3 | MOSFET 200V Vds 10V Vgs D2PAK (TO-263) | |
| SIHLL110TR-GE3 | MOSFET 100V Vds 20V Vgs SOT-223 | ||
| SIHLZ34S-GE3 | MOSFET 60V Vds 10V Vgs D2PAK (TO-263) | ||
| SIHLR120-GE3 | MOSFET 100V Vds 10V Vgs DPAK (TO-252) | ||
| SIHL-MHAX-03 | नयाँ र मौलिक | ||
| SIHL510 | नयाँ र मौलिक | ||
| SIHL510-E3 | नयाँ र मौलिक | ||
| SIHL510S | नयाँ र मौलिक | ||
| SIHL540S | नयाँ र मौलिक | ||
| SIHL540S-GE3 | नयाँ र मौलिक | ||
| SIHL540STRL-GE3 | SIHL540STRL-GE3 N-channel MOSFET Transistor, 28 A, 100 V, 2+Tab-Pin TO-263 | ||
| SIHL620S | नयाँ र मौलिक | ||
| SIHL630S | नयाँ र मौलिक | ||
| SIHLI520G | नयाँ र मौलिक | ||
| SIHLI540G | नयाँ र मौलिक | ||
| SIHLI630G | नयाँ र मौलिक | ||
| SIHLIZ24G-E3 | नयाँ र मौलिक | ||
| SIHLIZ34G | नयाँ र मौलिक | ||
| SIHLL014 | नयाँ र मौलिक | ||
| SIHLL014TR-GE3 | N-CHAN.2,7A 60V VGS 5V SOT223 | ||
| SIHLL024T-E3 | नयाँ र मौलिक | ||
| SIHLL110 | नयाँ र मौलिक | ||
| SIHLL110 BSP296N H6327 | नयाँ र मौलिक | ||
| SIHLL110-GE3 | नयाँ र मौलिक | ||
| SIHLL110T-E3 | नयाँ र मौलिक | ||
| SIHLL110TRGE3 | Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | ||
| SIHLR014 | नयाँ र मौलिक | ||
| SIHLR014-E3 | नयाँ र मौलिक | ||
| SIHLR014-GE3 | नयाँ र मौलिक | ||
| SIHLR014TL-E3 | नयाँ र मौलिक | ||
| SIHLR024 | नयाँ र मौलिक | ||
| SIHLR024-E3 | नयाँ र मौलिक | ||
| SIHLR024T-E3 | नयाँ र मौलिक | ||
| SIHLR024TR-GE3 | नयाँ र मौलिक | ||
| SIHLR024TRLGE3 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | ||
| SIHLR110 | नयाँ र मौलिक | ||
| SIHLR110PBF | नयाँ र मौलिक | ||
| SIHLR110TL-E3 | नयाँ र मौलिक | ||
| SIHLR120TL-E3 | नयाँ र मौलिक | ||
| SIHLU014-GE3 | नयाँ र मौलिक | ||
| SIHLU014GE3 | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | ||
| SIHLU110 | नयाँ र मौलिक | ||
| SIHLZ14 | नयाँ र मौलिक | ||
| SIHLZ14S | नयाँ र मौलिक | ||
| SIHLZ24S | नयाँ र मौलिक | ||
| SIHLZ24S-GE3 | नयाँ र मौलिक | ||
| SIHLZ34 | नयाँ र मौलिक |